Sanyo 2SK223 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
High Voltage Driver Applications
Ordering number:EN659K
2SK223
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, T aito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Ultrahigh withstand voltage (V
GDS
≥–80V).
· Due to low gate leakage currents even at high
voltage, the 2SK223 is suitable for a wide range of
application (I
=1nA/VDS=50V, ID=1mA).
GDL
· High yfs(yfs=20mS/VDS=30V, f=1kHz).
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
noitapissiDrewoPelbawollAP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot04–
G
D
Package Dimensions
unit:mm
2019B
[2SK223]
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : T O-92
EIAJ : SC-43
SSD
SDG
08V
08–V
01Am
004Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDV,V03=
ecnaticapaCtupnIssiCVSDV,V03=
ecnaticapaCrefsnarTesreveRssrCVSDV,V03=
erugiFesioNFNVSDI,V01=
* : The 2SK223 is classified by I
0.3D2.10.6E5.20.21F0.50.42G0.01
egatloVnwodkaerBniarD-ot-etaGV
tnerruCegakaeLecruoS-ot-etaGI
tnerruCniarDegatloVetaG-oreZI
as follows (unit : mm) :
DSS
I
SDG)RB(
V
SSG
*VSDV,V03=
SSD
V
)ffo(SG
Aµ001–=08–V
G
V,V03–=
SG
SD
0=0.1–An
SD
0=*2.1*42Am
SG
I,V03=
Aµ01=57.0–V
D
SG
SG
SG
D
zHk1=f,0=02Sm
zHM1=f,0=21Fp
zHM1=f,0=5.2Fp
k01=gR,Am3= Ω zHk1=f,5.1Bd
42099TH (KT)/71095TS (KOTO)/6027KI/2275MW, TS No.659–1/4
sgnitaR
nimpytxam
tinU
2SK223
No.659–2/4
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