Sanyo 2SK222 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
Low-Frequency,
Low Noise Amplifier Applications
Ordering number:EN836G
2SK222
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
5.0
4.0
0.5
0.6
2.0
14.0
5.0
0.45
0.45
4.0
0.44
1.3
1.3
123
Features
· Ultralow noise figure.
· Large yfs.
· Low gate leakage current.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVniarD-ot-etaGV
tnerruCetaGI
noitapissiDrewoPelbawollAP
erutarepmeTnoitcnuJjT 521
erutarepmeTegarotSgtsT 521+ot04–
G
D
Package Dimensions
unit:mm
2019B
[2SK222]
1 : Source
2 : Gate
3 : Drain
SANYO : NP
JEDEC : T O-92
EIAJ : SC-43
SSD
SDG
04V
04–V
01Am
003Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDV,V01=
ecnaticapaCtupnIssiCVSDV,V01=
ecnaticapaCrefsnarTesreveRssrCVSDV,V01=
erugiFesioN
egatloVesioNtupnItnelqviuqEV
* : The 2SK222 is classified by I
egatloVnwodkaerBniarD-ot-etaGV
tnerruCegakaeLecruoS-ot-etaGI
tnerruCniarDegatloVetaG-oreZI
as follows : (unit : mA).
DSS
I
SDG)RB(
G
V
SSG
SSD
1FNVSDV,V01=
2FNVSDV,V01=
IN
SG
*VSDV,V01=
V
)ffo(SG
SD
V
SD
Aµ001–=04–V
V02–= 0.1–An
0=*6.0*0.21Am
SG
I,V01=
Aµ01=5.0V
D
SG
SG
SG
SG
SG
V,V01=
SG
5.1C6.00.3D2.10.6E5.20.21F0.5
zHk1=f,0=71Sm
zHM1=f,0=41Fp
zHM1=f,0=5.3Fp
k1=gR,0= Ω zH001=f,0.10.3Bd
k1=gR,0= Ω zHk1=f,6.05.1Bd
k1=gR,0= Ω zHk1=f,2
42099TH (KT)/90895MO (KOTO)6027KI/2075MW 8-3836 No.836–1/3
sgnitaR
nimpytxam
tinU
nV/√Hz
2SK222
No.836–2/3
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