Sanyo 2SK2219 Specifications
Ordering number:ENN4755
N-Channel Junction Silicon FET
2SK2219
Capacitor Microphone Applications
Features
·Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.
·Especially suited for use in audio, telephone capacitor microphones.
·Excellent voltage characteristic.
·Excellent transient characteristic.
·Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Package Dimensions
unit:mm
2058A
[2SK2219]
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0.425 |
0.3 |
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0.15 |
0.2 |
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3 |
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2.1 |
1.250 |
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0 to 0.1 |
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1 |
2 |
0.3 |
0.6 |
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0.425 |
0.65 0.65 |
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0.9 |
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2.0 |
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1 : Source
2 : Drain
3 : Gate
SANYO : MCP
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Gate-to-Drain Voltage |
VGDO |
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–20 |
V |
Gate Current |
IG |
|
10 |
mA |
Drain Current |
ID |
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1 |
mA |
Allowable Power Dissipation |
PD |
|
100 |
mW |
Junction Temperature |
Tj |
|
150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
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Parameter |
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Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Gate-to-Drain Breakdown Voltage |
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V(BR)GDO |
IG=–100µA |
–20 |
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V |
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Zero-Gate Voltage Drain Current |
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IDSS |
VDS=5V, VGS=0 |
140* |
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500* |
µA |
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Cutoff Voltage |
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VGS(off) |
VDS=5V, ID=1µA |
–0.2 |
–0.6 |
–1.2 |
V |
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Forward Transfer Admittance |
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| yfs | |
VDS=5V, VGS=0, f=1kHz |
0.5 |
1,2 |
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mS |
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Input Capacitance |
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Ciss |
VDS=5V, VGS=0, f=1MHz |
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4.1 |
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pF |
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Reverse Transfer Capacitance |
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Crss |
VDS=5V, VGS=0, f=1MHz |
|
0.88 |
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pF |
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* : The 2SK2219 is classified by IDSS as follows : (unit : A) |
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Continued on next page. |
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140 |
21 |
240 |
210 |
22 |
350 |
320 |
23 |
500 |
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Marking : D
IDSS rank : 21, 22, 23
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82599TH (KT)/63094MT (KOTO) BX-0346 No.4755–1/4
2SK2219
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit |
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Voltage Gain |
GV |
VIN=10mV, f=1kHz |
|
–3.0 |
|
dB |
Reduced Voltage Characteristic |
GVV |
VIN=10mV, f=1kHz, VCC=4.5 → 1.5V |
|
–1.2 |
–3.5 |
dB |
Frequency Characteristic |
GVf |
f=1kHz to 110Hz |
|
|
–1.0 |
dB |
Input Impedance |
Zin |
f=1kHz |
25 |
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MΩ |
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Output Impedance |
Zo |
f=1kHz |
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700 |
Ω |
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Total Harmonic Distortion |
THD |
VIN=30mV, f=1kHz |
|
1.0 |
|
% |
Output Noise Voltage |
VNO |
VIN=0, A curve |
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–110 |
dB |
Test Circuit
Voltage Gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
No.4755–2/4
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