Sanyo 2SK2219 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Junction Silicon FET
Capacitor Microphone Applications
Ordering number:ENN4755
2SK2219
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
2.1
Features
· Ultrasmall-sized package permitting 2SK2219applied sets to be made small and slim.
· Especially suited for use in audio, telephone capacitor microphones.
· Excellent voltage characteristic.
· Excellent transient characteristic.
· Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVniarD-ot-etaGV
tnerruCetaGI
tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
ODG
G
D
D
Package Dimensions
unit:mm
2058A
[2SK2219]
0.3
0.425
1.250
0.425
12
0.65
0.65
2.0
3
0.3 0.6
0.9
0.15
0.2
0 to 0.1
1 : Source
2 : Drain
3 : Gate
SANYO : MCP
02–V
01Am
1Am
001Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDV,V5=
ecnaticapaCtupnIssiCVSDV,V5=
ecnaticapaCrefsnarTesreveRssrCVSDV,V5=
* : The 2SK2219 is classified by I
042120410532201200532023
egatloVnwodkaerBniarD-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
as follows : (unit : µA) Continued on next page.
DSS
I
ODG)RB(
V
SSD
V
)ffo(SG
Aµ001–=02–V
G
V,V5=
SD
SD
0=*041*005µA
SG
I,V5=
Aµ1=2.0–6.0–2.1–V
D
SG
SG
SG
zHk1=f,0=5.02,1Sm
zHM1=f,0=1.4Fp
zHM1=f,0=88.0Fp
nimpytxam
Marking : D
I
rank : 21, 22, 23
DSS
82599TH (KT)/63094MT (KOTO) BX-0346 No.4755–1/4
sgnitaR
tinU
Continued from preceding page.
retemaraPlobmySsnoitidnoC
Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit
niaGegatloVG
citsiretcarahCegatloVdecudeR
citsiretcarahCycneuqerF
ecnadepmItupnIniZzHk1=f52MΩ
ecnadepmItuptuOoZzHk1=f 007
noitrotsiDcinomraHlatoTDHTV
egatloVesioNtuptuOV
∆G
∆G
V
VV
fV
ON
Test Circuit
Voltage Gain
Frequency Characteristic
Distortion
Reduced Voltage Characteristic
2SK2219
V
NI
V
NI
NI
V
NI
sgnitaR
nimpytxam
zHk1=f,Vm01=0.3–Bd
V,zHk1=f,Vm01=
5.4= → V5.12.1–5.3–Bd
CC
zH011otzHk1=f 0.1–Bd
zHk1=f,Vm03=0.1%
evrucA,0= 011–Bd
tinU
Ω
No.4755–2/4
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