Ordering number:ENN4871
N-Channel Junction Silicon FET
2SK2171
High-Frequency, Low-Frequency Amplifier
Analog Switch Applications
Features
· Adoption of FBET process.
· Large | y
|.
fs
· Small Ciss.
· High PD allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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tnerruCetaGI
tnerruCniarDI
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erutarepmeTnoitcnuJjT 051
erutarepmeTegarotSgtsT 051+ot55–
G
D
D
Package Dimensions
unit:mm
2125
[2SK2171]
4.5
1.6
0.4
XSD
SDG
mm052(draobcimarecnodetnuoM
0.5
2
3
1.5
0.75
2
× )mm8.0008Wm
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Source
2 : Gate
3 : Drain
SANYO : PCP
(Bottom View)
04V
04–V
01Am
001Am
004Wm
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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ecnattimdArefsnarTdrawroF
SDG)RB(
SSG
**VSDV,V01=
SSD
)ffo(SG
1|sfy|VSDI,V01=
2|sfy|VSDV,V01=
I
G
V
V
V,Aµ01–=
0=04–V
SD
V,V02–=
SG
SD
0=0.1–An
SD
0=*04*57Am
SG
I,V01=
Aµ001=0.2–0.3–0.5–V
D
D
SG
zHk1=f,Am01=0151Sm
zHk1=f,0=2203Sm
nimpytxam
** : Pulse Test Pulse Width≤2mS Continued on next page.
* : The 2SK2171 is classified by I
Marking : KM
rank : 3, 4, 5
I
DSS
as follows : (unit : mA)
DSS
253043648457575
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
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tinU
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71599TH (KT)/32295TS (KOTO) BX-0033 No.4871–1/5
Continued from preceding page.
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2SK2171
SG
SG
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
SD
V
)no(SD
SD
k1=gR,V01= Ω I,
V,Vm01=
SG
zHM1=f,0=11Fp
zHM1=f,0=5.2Fp
D
0=03
zHk1=f,Am1=5.1Bd
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Ω
No.4871–2/5