Sanyo 2SK1813 Specifications

Ordering number:EN4177

				N-Channel Silicon MOSFET
				2SK1813
				High-Speed Switching Applications
Features				Package Dimensions
· Low ON resistance.				unit:mm
· Ultrahigh-speed switching.				2089

· Converters.

				[2SK1813]
		0.9	10.2		4.5	1.3
	11.5	1.6		8.8
20.9				1.2
	9.4	0.8		11.0	0.4
		1	2	3		1 : Gate
				2.7		2 : Drain
						3 : Source
		2.55		2.55
Specifications						SANYO : TO-220MF

Absolute Maximum Ratings at Ta = 25˚C

	Parameter	Symbol	Conditions	Ratings	Unit
	Drain-to-Source Voltage	VDSS		100	V
	Gate-to-Source Voltage	VGSS		±20	V
	Drain Current (DC)	ID		30	A
	Drain Current (pulse)	IDP	PW≤10µs, duty cycle≤1%	120	A
	Allowable Power Dissipation	PD		1.65	W
			Tc=25°C	70	W
	Junction Temperature	Tj		150	˚C
	Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	VDSS	ID=1mA, VGS=0	100			V
Zero-Gate Votlage Drain Current	IDSS	VDS=100V, VGS=0			100	µA
Gate-to-Source Leakage Current	IGSS	VGS=±20V, VDS=0			±100	nA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA	1.5		2.5	V
Forward Transfer Admittance	| yfs |	VDS=10V, ID=20A	13	22		S
Static Drain-to-Source On-State Resistance	RDS(on)	ID=20A, VGS=10V		0.040	0.055	Ω
(Note) Be careful in handling the 2SK1813 because it has no protection diode between gate and source.				Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62199TH (KT)/10694TH (KOTO) 8-7448 No.4177–1/4

2SK1813

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
Input Capacitance	Ciss	VDS=20V, f=1MHz		2400		pF
Output Capacitance	Coss	VDS=20V, f=1MHz		700		pF
Reverse Transfer Capacitance	Crss	VDS=20V, f=1MHz		200		pF
Turn-ON Delay Time	td(on)	ID=20A, VGS=10V, VDD=50V, RGS=50Ω		30		ns
Rise Time	tr	ID=20A, VGS=10V, VDD=50V, RGS=50Ω		90		ns
Turn-OFF Delay Time	td(off)	ID=20A, VGS=10V, VDD=50V, RGS=50Ω		320		ns
Fall Time	tf	ID=20A, VGS=10V, VDD=50V, RGS=50Ω		130		ns
Diode Forward Voltage	VSD	IF=30A, VGS=0			1.8	V

Switching Time Test Circuit

No.4177–2/4