Ordering number:EN4178A
N-Channel Junction FET
2SK1578
Capacitor Microphone Applications
Features |
Package Dimensions |
·Especially suited for use in audio, telephone capacitor microphones.
·Excellent voltage characteristics.
·Excellent transient characteristics.
·Adoption of FBET process.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
unit:mm
2034A
[2SK1578]
4.0 |
2.2 |
|
|
3.0 |
0.4 |
|
1.8 |
0.5 |
|
|
|
|
|
|
|
0.6 |
0.4 |
|
15.0 |
|
|
|
|
|
0.4 |
1 |
2 |
3 |
1.3 |
|
1.3 |
0.7 |
|
0.7 |
|
3.0 |
|
|
3.8nom |
1 : Source
2 : Gate
3 : Drain
SANYO : SPA
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
|
|
|
|
|
Gate-to-Drain Voltage |
VGDO |
|
–20 |
V |
Gate Current |
IG |
|
10 |
mA |
Drain Current |
ID |
|
1 |
mA |
Allowable Power Dissipation |
PD |
|
100 |
mW |
Channel Temperature |
Tj |
|
150 |
˚C |
|
|
|
|
|
Storage Temperature |
Tstg |
|
–55 to +150 |
˚C |
Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
min |
typ |
max |
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|
|
|
|
||||
|
|
|
|
|
|
|
|
Gate-to-Drain Breakdown Voltage |
V(BR)GDO |
IG=–100µA |
–20 |
|
|
V |
|
Cutoff Voltage |
VGS(off) |
VDS=5V, ID=1µA |
–0.2 |
–0.6 |
–1.5 |
V |
|
Zero-Gate Votlage Drain Current |
IDSS |
VDS=5V, VGS=0 |
100* |
|
800* |
µA |
|
Forward Transfer Admittance |
| yfs | |
VDS=5V, VGS=0, f=1MHz |
0.4 |
1.2 |
|
mS |
|
Input Capacitance |
Ciss |
VDS=5V, VGS=0, f=1MHz |
|
4.1 |
|
pF |
|
Reverse Transfer Capacitance |
Crss |
VDS=5V, VGS=0, f=1MHz |
|
0.88 |
|
pF |
* : The 2SK1578 is classified by IDSS as follows : (unit : A)
100 A 170 150 B 240 210 C 350 320 D 480 440 E 800
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
61599TH (KT)/72297TS (KOTO)/12094TH (KOTO) 8-7215 No.4178–1/4
2SK1578
Parameter |
Symbol |
Conditions |
|
Ratings |
|
Unit |
|
|
|
||||
|
|
|
min |
typ |
max |
|
|
|
|
|
|
|
|
[Ta=25°C, VCC=4.5V, RL=1kΩ, CIN=15pF, See specified Test Circuit.] |
|
|
|
|
||
Voltage Gain |
GV |
VIN=10mV, f=1kHz |
|
–3.0 |
|
dB |
Reduced Voltage Characteristics |
GVV |
VIN=10mV, f=1kHz, VCC=4.5 → 1.5V |
|
–1.2 |
–3.5 |
dB |
Frequency Characteristics |
GVf |
f=1kHz to 110Hz |
|
|
–1.0 |
dB |
Input Resistance |
ZIN |
f=1kHz |
25 |
|
|
mΩ |
Output Resistance |
ZO |
f=1kHz |
|
|
700 |
Ω |
Total Harmonic Distortion |
THD |
VIN=10mV, f=1kHz |
|
1.0 |
|
% |
Output Noise Voltage |
VNO |
VIN=0, A curve |
|
|
–110 |
dB |
Test Circuit
No.4178–2/4