Sanyo 2SK1463 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN3466
2SK1463
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
16.0
2.0
2.8
1.0
4.0
21.0
5.0
8.0
22.0
20.4
5.6
3.1
2.0
2.0
0.6
5.45
5.45
12
3
3.5
3.4
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
SSD SSG
PW≤10µs, duty cycle≤1% Tc=25°C
Package Dimensions
unit:mm
2076B
[2SK1463]
1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML
009V 03±V
5.4A 9A 06W
0.3W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV tnerruCniarDegatloVetaG-oreZI tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V02=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
I
V,Am1=
SSD)RB(
D
V
SSD SSG
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
0=009V
SG
V,V009=
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=0.20.3V
D
A2=0.10.2S
D
V,A2=
V01=8.26.3
SG
(Note) Be careful in handling the 2SK1463 because it has no protection diode between gate and source. Continued on next page.
61599TH (KT)/6131JN (KOTO) X-6826, 8035 No.3466–1/4
sgnitaR
nimpytxam
tinU
2SK1463
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
r
f
DS
SD SD SD
I
)no(d
)ffo(d
V,A2=
D
I
V,A2=
D
I
V,A2=
D
I
V,A2=
D
I
S
Switching Time Test Circuit
zHM1=f,V02=007Fp zHM1=f,V02=003Fp zHM1=f,V02=071Fp
V,V01=
SG SG SG SG
V,A5.4=
DD
V,V01=
DD
V,V01=
DD
V,V01=
DD
0=8.1V
SG
nimpytxam
R,V002=
05= 51sn
SG
R,V002=
05= 53sn
SG
R,V002=
05= 002sn
SG
R,V002=
05= 56sn
SG
sgnitaR
tinU
No.3466–2/4
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