Sanyo 2SK1460LS Specifications

Ordering number : ENN3463B

2SK1460LS

N-Channel Silicon MOSFET

2SK1460LS

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 7 A

Tc=25°C40W

Package Dimensions

unit : mm

2078C

[2SK1460LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source

SANYO : TO-220FI(LS)

900 V
±30 V

3.5 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 900 V
VDS=900V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

VDS=20V , ID=2A 1.0 2.0 S

min typ max

Marking : K1460 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N3001 TS IM TA-3433 / 61599 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO)

No.3463-1/4

2SK1460LS

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=10V 2.8 3.6 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 700 pF
Output Capacitance Coss VDS=20V , f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 170 pF
Turn-ON Delay Time td(on) ID=2A, VGS=10V, VDD=200V, RGS=50Ω 15 ns
Rise Time t
Turn-OFF Delay Time td(off) ID=2A, VGS=10V, VDD=200V, RGS=50Ω 200 ns
Fall Time t
Diode Forward Voltage V

SD

ID=2A, VGS=10V, VDD=200V, RGS=50Ω 35 ns

r

ID=2A, VGS=10V, VDD=200V, RGS=50Ω 65 ns

f

IS=3.5A, VGS=0 1.8 V

min typ max

(Note) Be careful in handling the 2SK1460LS because it has no protection diode between gate and source.

Ratings

Unit

Switching Time Test Circuit

V

GS

10V

R
50Ω

I

-- V

D

1248 2416 20

I

-- V

D

6

5

-- A

4

D

3

2

Drain Current, I

1

0

0

8

7

6

-- A

5

D

4

3

Drain Current, I

2

1

PW=1µs
D.C .≤0.5%

P.G

Drain-to-Source V oltage, V

G

GS

DS

V

GS

GS

=

V

DD

200V

D

S

10V

DS

Tc=

ID=2A
RL=100Ω

2SK1460LS

6V

5V

4V

3V

-- V

VDS=20V

--25

°C

25°C

75°C

V

OUT

ITR01596

10

8

-- A
D

6

4

Drain Current, I

2

0

0

8

7

6

-- A

5

D

4

3

Drain Current, I

2

1

I

-- V

D

DS

10V

=

GS

V

3010 20 6040 50

Drain-to-Source V oltage, V

I

-- Tc

D

DS

6V

5V

4V

-- V

VGS=10V

V

DS

ITR01597

=20V

10V

0

2861210 144

0

Gate-to-Source V oltage, V

GS

-- V

ITR01598

0

--60 --40 --20

2006040 16014012010080

Case Temperature, Tc -- °C

ITR01599

No.3463-2/4

5

4

-- V

(off)

3

GS

2

1

Cutoff Voltage, V

VGS(off) -- Tc

2SK1460LS

VDS=10V
ID=1mA

Switching Time, SW Time -- ns

100

5

3

2

7
5

3

2

SW Time -- I

t

d

t

r

td(on)

(off)

t

f

D

VDD=200V
VGS=10V
P.W.=1µs
D.C≤0.5%

0

--60 --40 --20

5

-- Ω

4

(on)

DS

3

2

Static Drain-to-Source

On-State Resistance, R

1

0

5

3

fs -- S

2

y

1.0
7
5

2006040 16014012010080

Case Temperature, Tc -- °C

RDS(on) -- V

4121482106

Gate-to-Source V oltage, V

y

fs -- I



D

GS

GS

-- V

=10V

DS

V

ITR01600

Tc=25°C
ID=2A

ITR01602

Tc=25°C

20V

10

5

72 235107

1.0

Drain Current, I

8

7

-- Ω

6

RDS(on) -- Tc

D

(on)

5

DS

4

3

2

Static Drain-to-Source

On-State Resistance, R

1

0

--60 --20--40 0 4020 8060 120100 160140

=10V

GS

V

20V

Case Temperature, Tc -- °C

y

fs -- I

fs -- S

y

1.0

5

3

2



Tc= --25°C

7
5

D

25

°C

75

-- A

°C

ITR01601

ITR01603

VDS=20V

Forward Transfer Admittance, 

1000

Ciss, Coss, Crss -- pF

0.1

100

3

2

57

5
3

2

7
5

3
2

7
5

3
2

0

0.1

3257

Drain Current, I

Ciss, Coss, Crss -- V

81216 3224 28204

Drain-to-Source V oltage, V

1.0

D

3257

-- A

DS

Ciss

Coss

Crss

-- V

DS

ITR02940

VGS=0
f=1MHz

ITR01605

3

2

Forward Transfer Admittance, 

0.1
57

10

10

-- A

1.0

D

Drain Current, I

0.1

0.1

IDP=7A

7
5

IDP=3.5A

3
2

7
5

Operation in
this area is

3

limited by RDS(on).

2

7
5

Tc=25°C

3

Single pulse

2

23 57

3257 7325

Drain Current, I

1.0 10

-- A

D

A S O

1ms

10ms

100ms

DC operation

22357

10

Drain-to-Source V oltage, V

100

23 57

DS

100µs

-- V

ITR01604

<5µs

10µs

1000

ITR01606

No.3463-3/4

2SK1460LS

P

-- Ta

2.4

2.0

-- W
D

1.6

1.2

0.8

D

No heat sink

-- W
D

50

40

30

20

P

-- Tc

D

0.4

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Ambient Temperature, Ta -- °C

ITR01607

10

Allowable Power Dissipation, P

0

0 20 40 60 80 100 120 140 160

Case Temperature, Tc -- °C

ITR01608

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.

No.3463-4/4

PS