Sanyo 2SK1460LS Specifications

Ordering number : ENN3463B

2SK1460LS

N-Channel Silicon MOSFET

2SK1460LS

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 7 A

Tc=25°C40W

Package Dimensions

unit : mm

2078C

[2SK1460LS]

10.0

16.1

3.6

123

2.55

0.9

0.75

1.2

2.55

3.2

3.5

7.2

16.0

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source

SANYO : TO-220FI(LS)

900 V
±30 V

3.5 A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance

(BR)DSSID

DSS
GSS

yfs





=1mA, VGS=0 900 V
VDS=900V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

VDS=20V , ID=2A 1.0 2.0 S

min typ max

Marking : K1460 Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N3001 TS IM TA-3433 / 61599 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO)

No.3463-1/4

2SK1460LS

Continued from preceding page.

Parameter Symbol Conditions

Static Drain-to-Source On-State Resistance RDS(on) ID=2A, VGS=10V 2.8 3.6 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 700 pF
Output Capacitance Coss VDS=20V , f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 170 pF
Turn-ON Delay Time td(on) ID=2A, VGS=10V, VDD=200V, RGS=50Ω 15 ns
Rise Time t
Turn-OFF Delay Time td(off) ID=2A, VGS=10V, VDD=200V, RGS=50Ω 200 ns
Fall Time t
Diode Forward Voltage V

SD

ID=2A, VGS=10V, VDD=200V, RGS=50Ω 35 ns

r

ID=2A, VGS=10V, VDD=200V, RGS=50Ω 65 ns

f

IS=3.5A, VGS=0 1.8 V

min typ max

(Note) Be careful in handling the 2SK1460LS because it has no protection diode between gate and source.

Ratings

Unit

Switching Time Test Circuit

V

GS

10V

R
50Ω

I

-- V

D

1248 2416 20

I

-- V

D

6

5

-- A

4

D

3

2

Drain Current, I

1

0

0

8

7

6

-- A

5

D

4

3

Drain Current, I

2

1

PW=1µs
D.C .≤0.5%

P.G

Drain-to-Source V oltage, V

G

GS

DS

V

GS

GS

=

V

DD

200V

D

S

10V

DS

Tc=

ID=2A
RL=100Ω

2SK1460LS

6V

5V

4V

3V

-- V

VDS=20V

--25

°C

25°C

75°C

V

OUT

ITR01596

10

8

-- A
D

6

4

Drain Current, I

2

0

0

8

7

6

-- A

5

D

4

3

Drain Current, I

2

1

I

-- V

D

DS

10V

=

GS

V

3010 20 6040 50

Drain-to-Source V oltage, V

I

-- Tc

D

DS

6V

5V

4V

-- V

VGS=10V

V

DS

ITR01597

=20V

10V

0

2861210 144

0

Gate-to-Source V oltage, V

GS

-- V

ITR01598

0

--60 --40 --20

2006040 16014012010080

Case Temperature, Tc -- °C

ITR01599

No.3463-2/4