Ordering number : ENN3461B
2SK1458LS
N-Channel Silicon MOSFET
2SK1458LS
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% 0.4 A
Tc=25°C20W
Package Dimensions
unit : mm
2078C
[2SK1458LS]
10.0
16.1
3.6
123
2.55
0.9
0.75
1.2
2.55
3.2
3.5
7.2
16.0
14.0
2.4
4.5
2.8
0.6
1.2
0.7
1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
900 V
±30 V
0.2 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=1mA, VGS=0 900 V
VDS=900V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA
VDS=20V, ID=0.1A 0.08 0.15 S
min typ max
Marking : K1458 Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N3001 TS IM TA-3433 / 61099 TH (KT) / 72597 TS (KOTO) / 6131 JN (KOTO)
No.3461-1/4
2SK1458LS
Continued from preceding page.
Parameter Symbol Conditions
Static Drain-to-Source On-State Resistance RDS(on) ID=0.1A, VGS=10V 50 70 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 45 pF
Output Capacitance Coss VDS=20V , f=1MHz 25 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 10 pF
Turn-ON Delay Time td(on) ID=0.1A, VGS=10V, VDD=200V, RGS=50Ω 10 ns
Rise Time t
Turn-OFF Delay Time td(off) ID=0.1A, VGS=10V, VDD=200V, RGS=50Ω 30 ns
Fall Time t
Diode Forward Voltage V
SD
ID=0.1A, VGS=10V, VDD=200V, RGS=50Ω 15 ns
r
ID=0.1A, VGS=10V, VDD=200V, RGS=50Ω 180 ns
f
IS=0.2A, VGS=0 1.8 V
min typ max
(Note) Be careful in handling the 2SK1458LS because it has no protection diode between gate and source.
Ratings
Unit
Switching Time Test Circuit
P.W.=1µs
D.C .≤0.5%
V
10V
P.G.
I
-- V
V
GS
I
D
D
=10V
1248 242016
-- V
0.24
0.20
-- A
0.16
D
0.12
0.08
Drain Current, I
0.04
0
0
0.4
Drain-to-Source V oltage, V
GS
R
GS
50Ω
G
DS
5V
GS
D
S
DS
V
DD
200V
-- V
ID=0.1A
RL=2kΩ
2SK1458LS
4V
3V
VDS=20V
V
OUT
ITR01568
0.5
0.4
-- A
D
0.3
0.2
Drain Current, I
0.1
0
0
0.4
I
-- V
D
DS
3010 20 605040
Drain-to-Source V oltage, V
I
-- Tc
D
V
GS
DS
=10V
6V
5V
4V
3V
-- V
ITR01569
VGS=10V
0.3
-- A
D
0.2
Drain Current, I
0.1
0
0
2681014124
Gate-to-Source V oltage, V
Tc=25°C
120°C
-- V
GS
75
°C
ITR01570
0.3
-- A
D
0.2
Drain Current, I
0.1
0
--60
V
DS
=20V
10V
Case Temperature, Tc -- °C
40--40 12080 1600 20 10060 140--20
ITR01571
No.3461-2/4
5
4
-- V
(off)
3
GS
2
1
Cutoff Voltage, V
0
--60
160
-- Ω
(on)
DS
80
40
VGS(off) -- Tc
Case Temperature, Tc -- °C
RDS(on) -- V
GS
2SK1458LS
ID=1mA
VDS=10V
16040--40 120800 20 10060 140--20
ITR01572
Tc=25°C
ID=0.1A
1000
Switching Time, SW Time -- ns
-- Ω
(on)
DS
100
160
120
3
2
SW Time -- I
D
VDD=200V
VGS=10V
P.W.=1µs
7
5
3
2
7
5
3
2
10
7
5
255377
Drain Current, I
t
d
t
r
0.1
D
D.C.≤0.5%
t
f
(off)
td(on)
2537
-- A
ITR01573
1.00.01
RDS(on) -- Tc
=10V
=0.1A, V
D
=0.1A, V
I
D
GS
GS
=20V
80
I
40
Static Drain-to-Source
On-State Resistance, R
0
0
3
2
fs -- S
y
0.1
7
5
3
2
Forward Transfer Admittance,
0.01
7325325
0.01
3
2
100
7
5
3
2
10
7
5
3
Ciss, Coss, Crss -- pF
2
1.0
7
5
0
Gate-to-Source V oltage, V
y
fs -- I
Drain Current, I
GS
D
5
7
0.1
-- A
D
Ciss, Coss, Crss -- V
81216202428324
Drain-to-Source V oltage, V
DS
-- V
=10V
DS
V
DS
-- V
12 14842106
ITR01574
Tc=25°C
20V
ITR01576
VGS=0
f=1MHz
Ciss
Coss
Crss
ITR01578
Static Drain-to-Source
On-State Resistance, R
0
fs -- S
y
--60
5
3
2
0.1
7
5
3
2
120
Forward Transfer Admittance,
0.01
7325325
0.01
1.0
7
IDP=0.4A
5
3
ID=0.2A
2
-- A
D
0.1
7
Operation in
5
this area is
3
Drain Current, I
0.01
limited by RDS(on).
2
Tc=25°C
7
Single pulse
5
Case Temperature, Tc -- °C
40--40 120800 20 10060--20
y
fs -- I
D
V
Tc= --25°C
25°C
75°C
5
7
Drain Current, I
D
0.1
-- A
A S O
<50µs
100µs
1ms
DC operation
10ms
23 57 2 235723 57
10 100 1000
Drain-to-Source V oltage, V
DS
-- V
No.3461-3/4
ITR01575
=20V
DS
ITR01577
ITR01579
160140
2.4
2SK1458LS
P
D
-- Ta
Ta=25°C
24
P
-- Tc
D
2.0
-- W
D
1.6
No heat sink
1.2
0.8
0.4
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
ITR01580
20
-- W
D
16
12
8
4
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
ITR01581
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.
PS
No.3461-4/4
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