Sanyo 2SK1457 Specifications

Ordering number:EN3460

N-Channel Silicon MOSFET

2SK1457

Ultrahigh-Speed Switching Applications

Features

·Low ON-state resistance.

·Ultrahigh-speed switching.

·Converters.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Package Dimensions

unit:mm

2052C

			[2SK1457]
		10.2	4.5
	3.6	5.1
			1.3
			2.7
			6.3
			15.1

18.0

5.6		1.2
			14.0	1	: Gate
		0.8
				0.4
				2	: Drain
1	2	3		3	: Source
		2.7		EIAJ : SC-46
2.55		2.55		SANYO : TO-220AB

Parameter	Symbol	Conditions	Ratings	Unit
Drain-to-Source Voltage	VDSS		900	V
Gate-to-Source Voltage	VGSS		±30	V
Drain Current (DC)	ID		5	A
Drain Current (Pulse)	IDP	PW≤10µs, duty cycle≤1%	10	A
Allowable Power Dissipation	PD	Tc=25°C	70	W
			1.75	W
Channel Temperature	Tch		150	˚C
Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0	900			V
Zero-Gate Voltage Drain Current	IDSS	VDS=900V, VGS=0			1.0	mA
Gate-to-Source Leakage Current	IGSS	VGS=±30V, VDS=0			±100	nA
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA	2.0		3.0	V
Forward Transfer Admittance	| yfs |	VDS=20V, ID=2A	1.0	2.0		S
Static Drain-to-Source ON-State Resistance	RDS(on)	ID=2A, VGS=10V		2.8	3.6	Ω
(Note) Be careful in handling the 2SK1457 because it has no protection diode between gate and source.				Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

61099TH (KT)/6131JN (KOTO) X-6826, 8035 No.3460–1/4

2SK1457

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=20V, f=1MHz		700		pF
Output Capacitance	Coss	VDS=20V, f=1MHz		300		pF
Reverse Transfer Capacitance	Crss	VDS=20V, f=1MHz		170		pF
Turn-ON Delay Time	td(on)	ID=2A, VGS=10V, VDD=200V, RGS=50Ω		15		ns
Rise Time	tr	ID=2A, VGS=10V, VDD=200V, RGS=50Ω		35		ns
Turn-OFF Delay Time	td(off)	ID=2A, VGS=10V, VDD=200V, RGS=50Ω		200		ns
Fall Time	tf	ID=2A, VGS=10V, VDD=200V, RGS=50Ω		65		ns
Diode Forward Voltage	VSD	IS=5A, VGS=0			1.8	V

Switching Time Test Circuit

No.3460–2/4