Sanyo 2SK1447LS Specifications

Ordering number : ENN3450B

2SK1447LS

N-Channel Silicon MOSFET

2SK1447LS

Ultrahigh-Speed Switching Applications

Features

•Low ON-resistance.

•Ultrahigh-speed switching.

•Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at Ta=25°C

Package Dimensions

unit : mm

2078C

[2SK1447LS]

10.0	3.2	4.5
		2.8
3.5	7.2
		16.0

16.1		0.6
3.6	0.9 1.2	1.2

	0.75	14.0
		0.7
1 2	3	1	: Gate
	2.4	2	: Drain
		3	: Source
2.55	2.55	SANYO : TO-220FI(LS)

Parameter	Symbol	Conditions				Ratings			Unit
Drain-to-Source Voltage	VDSS						450		V
Gate-to-Source Voltage	VGSS						±30		V
Drain Current (DC)	ID						9		A
Drain Current (Pulse)	IDP	PW≤10μs, duty cycle≤1%					36		A
Allowable Power Dissipation	PD						2.0		W
		Tc=25°C					40		W
Channel Temperature	Tch						150		°C
Storage Temperature	Tstg						--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions				Ratings			Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=1mA, VGS=0		450					V
Zero-Gate Voltage Drain Current	IDSS	VDS=450V, VGS=0						1.0	mA
Gate-to-Source Leakage Current	IGSS	VGS=±30V, VDS=0						±100	nA
(Note) Be careful in handling the 2SK1447LS because it has no protection diode between gate and source.							Continued on next page.
Marking : K1447

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO) No.3450-1/4

2SK1447LS

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Cutoff Voltage	VGS(off)	VDS=10V, ID=1mA	2.0		3.0	V
Forward Transfer Admittance	½yfs½	VDS=10V, ID=6A	4.0	8.0		S
Static Drain-to-Source On-State Resistance	RDS(on)	ID=6A, VGS=10V		0.47	0.6	W
Input Capacitance	Ciss	VDS=20V, f=1MHz		1600		pF
Output Capacitance	Coss	VDS=20V, f=1MHz		220		pF
Reverse Transfer Capacitance	Crss	VDS=20V, f=1MHz		80		pF
Turn-ON Delay Time	td(on)	ID=6A, VGS=10V, VDD=200V, RGS=50W		25		ns
Rise Time	tr	ID=6A, VGS=10V, VDD=200V, RGS=50W		60		ns
Turn-OFF Delay Time	td(off)	ID=6A, VGS=10V, VDD=200V, RGS=50W		250		ns
Fall Time	tf	ID=6A, VGS=10V, VDD=200V, RGS=50W		80		ns
Diode Forward Voltage	VSD	IS=9A, VGS=0			1.8	V

Switching Time Test Circuit

	VDD
	200V
	PW=1ms
	D.C.≤ 0.5%	ID=6A
	VGS	RL=33.3W
	10V	VOUT
	D
	G
	S
P.G	RGS	2SK1447LS
	50W

	24									ID -- VDS
																.0V
	20											.0V			6
									=10
A																	5.5V
										GS
										V
--	16
D																	5.0V
I
Current,	12
Drain																	4.5V
	8
																	4.0V
	4
																	3.5V
	0
	0		4				8					12				16	20					24
						Drain-to-Source Voltage, VDS -- V															ITR01430
	28									ID		-- Tc
																		V	DS			=10V
																		V				=10V
	24																		GS
A
	20
--
D
I	16
Current,
	12
Drain
	8
	4
	0
	--60		--40 --20				0 20 40					60 80					100 120					140 160
							Case Temperature, Tc									--	°C				ITR01432

Drain Current, ID -- A

Cutoff Voltage, VGS(off) -- V

20								ID -- VGS
							C											VDS=10V
							°
							25						25°			C
16							--
							Tc=								°C
													75
12
8
4
0
0		2		4			6				8				10					12			14
					Gate-to-Source Voltage, VGS -- V																ITR01431
5							VGS(off) -- Tc
																	V		DS			=10V
																	I			=1mA
																		D
4
3
2
1
0
--60		--40		--20 0			20 40				60 80				100 120 140								160
					Case Temperature, Tc --										°C						ITR01433

No.3450-2/4