Sanyo 2SK1444LS Specifications

Ordering number : ENN3447D

2SK1444LS

N-Channel Silicon MOSFET

2SK1444LS

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Micaless package facilitating mounting.

Package Dimensions

unit : mm

2078C

[2SK1444LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

7.2

16.0

1.2

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A

Tc=25°C25W

2.55

2.55

SANYO : TO-220FI(LS)

450 V
±30 V

3A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I

(BR)DSSID

DSS
GSS

=1mA, VGS=0 450 V
VDS=450V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

min typ max

(Note) Be careful in handling the 2SK1444LS because it has no protection diode between gate and source. Continued on next page.
Marking : K1444

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO)

No.3447-1/4

2SK1444LS

Continued from preceding page.

Parameter Symbol Conditions

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=10V 2.0 2.6 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 400 pF
Output Capacitance Coss VDS=20V , f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 80 ns
Fall Time t
Diode Forward Voltage V

yfs



SD

VDS=10V, ID=0.5A 1.1 2.2 S



See specified Test Circuit. 20 ns

r

See specified Test Circuit. 35 ns

f

IS=3A, VGS=0 1.8 V

min typ max

Ratings

Unit

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=1µs
D.C .≤0.5%

I

V

D

R
50Ω

-- V

=10.0V

GS

P.G

6

5

-- A

4

D

3

GS

G

DS

6.0V

VDD=

200V

D

S

5.5V

5.0V

ID=1.5A

RL=133Ω

V

2SK1444LS

OUT

-- A
D

6

5

4

3

I

D

-- V

GS

Tc= --25°C

25°C

75°C

V

=10V

DS

2

Drain Current, I

1

0

0

7

6

5

-- A
D

4

3

2

Drain Current, I

1

0

--60

--40 --20 0 20 40 60 80 100 120 140 160

4.5V

4.0V

4 8 12 16 20

Drain-to-Source V oltage, V

I

-- Tc

D

DS

-- V

V

Case Temperature, Tc -- °C

ITR01394

=10V

DS

ITR01396

2

Drain Current, I

1

0

24

0

5

4

-- V

(off)

3

GS

2

1

Cutoff Voltage, V

0

--60

--40 --20 0 20 40 60 80 100 120 140

4681012

2

Gate-to-Source V oltage, V

GS

VGS(off) -- Tc

Case Temperature, Tc -- °C

-- V

V
I

D

ITR01395

DS

=1mA

ITR01397

14

=10V

160

No.3447-2/4

4

-- Ω
(on)

3

DS

2

Static Drain-to-Source

On-State Resistance, R

1

0

246

5

3

fs -- S

2

y

1.0
7

5

3

2

Forward Transfer Admittance, 

0.1

5

72357

0.1

2

1000

7
5

3
2

100

7
5

Ciss, Coss, Crss -- pF

3
2

10

0

4

2.4

2.0

-- W
D

1.6

1.2

0.8

2SK1444LS

RDS(on) -- V

I

Gate-to-Source V oltage, V

y

fs -- I



Tc= --25°C

75°C

Drain Current, I

Ciss, Coss, Crss -- V

812 20242832

Drain-to-Source V oltage, V

PD -- Ta

No heat sink

=3.0A

D

1.5A

1.0A

16

GS

8

10 12 14

GS

D

25°C

235

1.0

-- A

D

DS

-- V

DS

Ciss

Coss

Crss

-- V

Tc=25°C

ITR01398

VDS=10V

7

ITR01400

VGS=0
f=1MHz

ITR01402

5

4

-- Ω
(on)

DS

3

2

1

Static Drain-to-Source

On-State Resistance, R

0

--60 --40 --20 0

5

3
2

100

7
5

3
2

RDS(on) -- Tc

=10V

GS

=1.5A, V

I

D

=1.5A, V

I

D

40 60 80 100 120 140

20

Case Temperature, Tc -- °C

SW Time -- I

GS

=20V

D

t

f

t

r

VDD=200V
VGS=10V
P.W.=1µs
D.C.≤0.5%

t

(off)

d

160

ITR01399

td(on)

Switching Time, SW Time -- ns

10

7

10

5

0.1

2

10

7
5

3
2

-- A
D

1.0
7

5
3

2

Drain Current, I

0.1
7

5
3

2

2

28

25
24

-- W

2

Drain Current, I

1.0

D

A S O

IDP=12A

ID=3A

100ms

DC operation

Operation in this
area is limited by RDS(on).

Tc=25°C
Single pulse

3

57 2 3 57 2 3 7

10 100

Drain-to-Source V oltage, V

P

-- Tc

D

-- A

1ms

10ms

DS

10µs

100µs

-- V

2 33 5 7

<1µs

ITR01401

5

ITR01403

5

1000

D

20

16

12

8

0.4

Allowable Power Dissipation, P

0

20 40

0

60 80 100 120 140 160

Ambient Temperature, Ta -- °C

ITR01404

4

Allowable Power Dissipation, P

0

0 204060

80 100 120 140

Case Temperature, Tc -- °C

160

ITR01405

No.3447-3/4

2SK1444LS

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.

Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of November, 2001. Specifications and information herein are subject
to change without notice.

No.3447-4/4

PS