Sanyo 2SK1444LS Specifications

Ordering number : ENN3447D

2SK1444LS

N-Channel Silicon MOSFET

2SK1444LS

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

Micaless package facilitating mounting.

Package Dimensions

unit : mm

2078C

[2SK1444LS]

10.0

16.1

3.6

123

0.9

0.75

3.2

3.5

7.2

16.0

1.2

14.0

2.4

4.5

2.8

0.6

1.2

0.7

1 : Gate
2 : Drain
3 : Source

Specifications

Absolute Maximum Ratings at T a=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% 12 A

Tc=25°C25W

2.55

2.55

SANYO : TO-220FI(LS)

450 V
±30 V

3A

2.0 W

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I

(BR)DSSID

DSS
GSS

=1mA, VGS=0 450 V
VDS=450V, VGS=0 1.0 mA
VGS=±30V, VDS=0 ±100 nA

min typ max

(Note) Be careful in handling the 2SK1444LS because it has no protection diode between gate and source. Continued on next page.
Marking : K1444

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Unit

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO)

No.3447-1/4

2SK1444LS

Continued from preceding page.

Parameter Symbol Conditions

Cutoff Voltage VGS(off) VDS=10V, ID=1mA 2.0 3.0 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance RDS(on) ID=0.5A, VGS=10V 2.0 2.6 Ω
Input Capacitance Ciss VDS=20V , f=1MHz 400 pF
Output Capacitance Coss VDS=20V , f=1MHz 60 pF
Reverse Transfer Capacitance Crss VDS=20V , f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 12 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 80 ns
Fall Time t
Diode Forward Voltage V

yfs



SD

VDS=10V, ID=0.5A 1.1 2.2 S



See specified Test Circuit. 20 ns

r

See specified Test Circuit. 35 ns

f

IS=3A, VGS=0 1.8 V

min typ max

Ratings

Unit

Switching Time Test Circuit

V

IN

10V

0V

V

IN

PW=1µs
D.C .≤0.5%

I

V

D

R
50Ω

-- V

=10.0V

GS

P.G

6

5

-- A

4

D

3

GS

G

DS

6.0V

VDD=

200V

D

S

5.5V

5.0V

ID=1.5A

RL=133Ω

V

2SK1444LS

OUT

-- A
D

6

5

4

3

I

D

-- V

GS

Tc= --25°C

25°C

75°C

V

=10V

DS

2

Drain Current, I

1

0

0

7

6

5

-- A
D

4

3

2

Drain Current, I

1

0

--60

--40 --20 0 20 40 60 80 100 120 140 160

4.5V

4.0V

4 8 12 16 20

Drain-to-Source V oltage, V

I

-- Tc

D

DS

-- V

V

Case Temperature, Tc -- °C

ITR01394

=10V

DS

ITR01396

2

Drain Current, I

1

0

24

0

5

4

-- V

(off)

3

GS

2

1

Cutoff Voltage, V

0

--60

--40 --20 0 20 40 60 80 100 120 140

4681012

2

Gate-to-Source V oltage, V

GS

VGS(off) -- Tc

Case Temperature, Tc -- °C

-- V

V
I

D

ITR01395

DS

=1mA

ITR01397

14

=10V

160

No.3447-2/4