Ordering number : ENN3447D
2SK1444LS
N-Channel Silicon MOSFET
2SK1444LS
Ultrahigh-Speed Switching Applications
Features
•Low ON-resistance.
•Ultrahigh-speed switching.
•Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Package Dimensions
unit : mm
2078C
[2SK1444LS]
10.0 |
3.2 |
4.5 |
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2.8 |
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3.5 |
7.2 |
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16.0 |
16.1 |
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0.6 |
3.6 |
0.9 1.2 |
1.2 |
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0.75 |
14.0 |
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0.7 |
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1 2 |
3 |
1 |
: Gate |
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2.4 |
2 |
: Drain |
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3 |
: Source |
2.55 |
2.55 |
SANYO : TO-220FI(LS) |
Parameter |
Symbol |
Conditions |
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Unit |
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Drain-to-Source Voltage |
VDSS |
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450 |
V |
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Gate-to-Source Voltage |
VGSS |
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±30 |
V |
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Drain Current (DC) |
ID |
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3 |
A |
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Drain Current (Pulse) |
IDP |
PW≤10μs, duty cycle≤1% |
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12 |
A |
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Allowable Power Dissipation |
PD |
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2.0 |
W |
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Tc=25°C |
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25 |
W |
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Channel Temperature |
Tch |
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150 |
°C |
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Storage Temperature |
Tstg |
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--55 to +150 |
°C |
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Electrical Characteristics at Ta=25°C |
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Parameter |
Symbol |
Conditions |
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Ratings |
Unit |
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min |
typ |
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max |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0 |
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450 |
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V |
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Zero-Gate Voltage Drain Current |
IDSS |
VDS=450V, VGS=0 |
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1.0 |
mA |
Gate-to-Source Leakage Current |
IGSS |
VGS=±30V, VDS=0 |
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±100 |
nA |
(Note) Be careful in handling the 2SK1444LS because it has no protection diode between gate and source. |
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Continued on next page. |
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Marking : K1444 |
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Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
N1501 TS IM TA-3431 / 61099 TH (KT) / 72597 TS (KOTO) / 7151 JN (KOTO) No.3447-1/4
2SK1444LS
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
2.0 |
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3.0 |
V |
Forward Transfer Admittance |
½yfs½ |
VDS=10V, ID=0.5A |
1.1 |
2.2 |
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S |
Static Drain-to-Source On-State Resistance |
RDS(on) |
ID=0.5A, VGS=10V |
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2.0 |
2.6 |
W |
Input Capacitance |
Ciss |
VDS=20V, f=1MHz |
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400 |
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pF |
Output Capacitance |
Coss |
VDS=20V, f=1MHz |
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60 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=20V, f=1MHz |
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25 |
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pF |
Turn-ON Delay Time |
td(on) |
See specified Test Circuit. |
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12 |
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ns |
Rise Time |
tr |
See specified Test Circuit. |
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20 |
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ns |
Turn-OFF Delay Time |
td(off) |
See specified Test Circuit. |
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80 |
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ns |
Fall Time |
tf |
See specified Test Circuit. |
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35 |
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ns |
Diode Forward Voltage |
VSD |
IS=3A, VGS=0 |
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1.8 |
V |
Switching Time Test Circuit
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VDD= |
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VIN |
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200V |
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10V |
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0V |
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ID=1.5A |
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VIN |
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RL=133W |
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PW=1ms |
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D |
VOUT |
D.C.≤ 0.5% |
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G |
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S |
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P.G |
RGS |
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2SK1444LS |
50W |
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6 |
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ID -- VDS |
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5 |
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0V |
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A |
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=10 |
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.0V |
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5.5V |
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GS |
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6 |
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V |
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-- |
4 |
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D |
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I |
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5.0V |
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Current, |
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Drain |
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4.5V |
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2 |
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4.0V |
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1 |
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0 |
4 |
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8 |
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12 |
16 |
20 |
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24 |
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Drain-to-Source Voltage, VDS -- V |
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ITR01394 |
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7 |
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ID -- |
Tc |
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V |
DS |
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=10V |
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A |
6 |
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5 |
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-- |
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D |
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I |
4 |
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DrainCurrent, |
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3 |
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1 |
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0 |
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--60 |
--40 --20 |
0 |
20 40 |
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60 80 |
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100 120 |
140 160 |
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Case Temperature, Tc -- |
°C |
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ITR01396 |
Drain Current, ID -- A
Cutoff Voltage, VGS(off) -- V
6 |
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ID -- VGS |
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Tc= |
25°C |
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VDS=10V |
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-- |
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5 |
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25°C |
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4 |
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75°C |
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3 |
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0 |
2 |
4 |
6 |
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10 |
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12 |
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14 |
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Gate-to-Source Voltage, VGS -- V |
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ITR01395 |
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5 |
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VGS(off) -- Tc |
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V |
DS |
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I |
D |
=1mA |
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--60 |
--40 |
--20 0 |
20 40 |
60 80 |
100 120 140 |
160 |
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Case Temperature, Tc -- |
°C |
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ITR01397 |
No.3447-2/4