Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN3444
2SK1441
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
SSD
SSG
PW≤10µs, duty cycle≤1%
Tc=25°C
Package Dimensions
unit:mm
2052C
[2SK1441]
3.6
5.6
2.55
5.1
123
2.7
6.3
15.1
1.2
14.0
0.8
2.7
2.55
4.5
1.3
1 : Gate
0.4
2 : Drain
3 : Source
EIAJ : SC-46
SANY O : T O-220AB
054V
03±V
8A
23A
07W
57.1W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
0=054V
SG
V,V054=
0=0.1Am
SG
V,V03±=
0=001±An
SD
I,V01=
Am1=0.20.3V
D
A4=0.30.6S
D
V,A4=
V01=6.08.0
SG
(Note) Be careful in handling the 2SK1441 because it has no protection diode between gate and source. Continued on next page.
52899TH (KT)/7151JN (KOTO) X-6827, 8035 No.3444–1/4
nimpytxam
sgnitaR
tinU
Ω
2SK1441
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
I
)no(d
)ffo(d
V,A4=
D
I
V,A4=
D
I
V,A4=
D
I
V,A4=
D
I
V,A8=
S
Switching Time Test Circuit
zHM1=f,V02=0021Fp
zHM1=f,V02=081Fp
zHM1=f,V02=07Fp
V,V01=
SG
SG
SG
SG
SG
DD
V,V01=
DD
V,V01=
DD
V,V01=
DD
0=8.1V
nimpytxam
R,V002=
05= Ω 02sn
SG
R,V002=
05= Ω 04sn
SG
R,V002=
05= Ω 061sn
SG
R,V002=
05= Ω 06sn
SG
sgnitaR
tinU
No.3444–2/4