Sanyo 2SK1426 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN3564A
2SK1426
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
20.0
20.7
26.0
Features
· Low ON-state resistance.
· Ultrahigh-speed switching.
· Converters.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
SSD
SSG
PW≤10µs, duty cycle≤1%
Tc=25°C
Package Dimensions
unit:mm
2077A
[2SK1426]
6.0
2.0
3.4
12
3.3
1.0
2.0
1.2
3
2.8
5.455.45
5.0
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PBL
06V
02±V
001A
004A
002W
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR
I
V,Am1=
SSD)RB(
D
V
SSD
SSG
SD
V
SG
V
)ffo(SG
SD
I
)no(SD
D
0=06V
SG
V,V06=
0=001Aµ
SG
V,V02±=
0=001±An
SD
I,V01=
Am1=5.15.2V
D
A06=0407S
D
V,A06=
V01=800.0210.0
SG
nimpytxam
(Note) Be careful in handling the 2SK1426 because it has no protection diode between gate and source. Continued on next page.
52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3564–1/4
sgnitaR
tinU
Ω
2SK1426
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
I
)no(d
D
I
D
I
)ffo(d
D
I
D
I
S
Switching Time Test Circuit
zHM1=f,V02=0027Fp
zHM1=f,V02=0033Fp
zHM1=f,V02=009Fp
V,A06=
V,A06=
V,A06=
V,A06=
V,A001=
V,V01=
SG
SG
SG
SG
SG
DD
V,V01=
DD
V,V01=
DD
V,V01=
DD
0=8.1V
nimpytxam
R,V03=
05= Ω 87sn
SG
R,V03=
05= Ω 226sn
SG
R,V03=
05= Ω 056sn
SG
R,V03=
05= Ω 006sn
SG
sgnitaR
tinU
No.3564–2/4
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