Ordering number:EN3562
N-Channel Silicon MOSFET
2SK1424
Ultrahigh-Speed Switching Applications
Features |
Package Dimensions |
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· Low ON-state resistance. |
unit:mm |
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· Ultrahigh-speed switching. |
2076B |
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· Converters. |
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[2SK1424] |
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· Micaless package facilitating easy mounting. |
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3.4 |
16.0 |
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5.6 |
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3.1 |
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5.0 |
8.0 |
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21.0 |
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22.0 |
2.0 |
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4.0 |
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2.8 |
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2.0 |
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2.0 |
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1.0 |
20.4 |
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0.6 |
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1 |
2 |
3 |
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1 |
: Gate |
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2 |
: Drain |
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3.5 |
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3 |
: Source |
Specifications |
5.45 |
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5.45 |
SANYO : TO-3PML |
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Absolute Maximum Ratings at Ta = 25˚C
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
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Drain-to-Source Voltage |
VDSS |
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60 |
V |
Gate-to-Source Voltage |
VGSS |
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±20 |
V |
Drain Current (DC) |
ID |
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40 |
A |
Drain Current (Pulse) |
IDP |
PW≤10µs, duty cycle≤1% |
160 |
A |
Allowable Power Dissipation |
PD |
Tc=25°C |
60 |
W |
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3.0 |
W |
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Channel Temperature |
Tch |
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150 |
˚C |
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Storage Temperature |
Tstg |
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–55 to +150 |
˚C |
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Electrical Characteristics at Ta = 25˚C
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
ID=1mA, VGS=0 |
60 |
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V |
Zero-Gate Voltage Drain Current |
IDSS |
VDS=60V, VGS=0 |
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100 |
µA |
Gate-to-Source Leakage Current |
IGSS |
VGS=±20V, VDS=0 |
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±100 |
nA |
Cutoff Voltage |
VGS(off) |
VDS=10V, ID=1mA |
1.5 |
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2.5 |
V |
Forward Transfer Admittance |
| yfs | |
VDS=10V, ID=25A |
15 |
25 |
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S |
Static Drain-to-Source ON-State Resistance |
RDS(on) |
ID=25A, VGS=10V |
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0.020 |
0.026 |
Ω |
(Note) Be careful in handling the 2SK1424 because it has no protection diode between gate and source. |
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Continued on next page. |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52899TH (KT)/7151JN (KOTO) X-6618, 8035 No.3562–1/4
2SK1424
Continued from preceding page.
Parameter |
Symbol |
Conditions |
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Ratings |
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Unit |
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min |
typ |
max |
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Input Capacitance |
Ciss |
VDS=20V, f=1MHz |
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2400 |
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pF |
Output Capacitance |
Coss |
VDS=20V, f=1MHz |
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1100 |
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pF |
Reverse Transfer Capacitance |
Crss |
VDS=20V, f=1MHz |
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300 |
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pF |
Turn-ON Delay Time |
td(on) |
ID=25A, VGS=10V, VDD=30V, RGS=50Ω |
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31 |
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ns |
Rise Time |
tr |
ID=25A, VGS=10V, VDD=30V, RGS=50Ω |
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159 |
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ns |
Turn-OFF Delay Time |
td(off) |
ID=25A, VGS=10V, VDD=30V, RGS=50Ω |
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240 |
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ns |
Fall Time |
tf |
ID=25A, VGS=10V, VDD=30V, RGS=50Ω |
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140 |
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ns |
Diode Forward Voltage |
VSD |
IS=40A, VGS=0 |
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1.8 |
V |
Switching Time Test Circuit
No.3562–2/4