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www.DataSheet4U.com
Ordering number : ENN7421
2SJ633
P-Channel Silicon MOSFET
2SJ633
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
Package Dimensions
unit : mm
2083B
[2SJ633]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
1.5
5.5
1.6
Package Dimensions
unit : mm
2092B
7.0
7.5
2.3
0.5
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
[2SJ633]
6.5
5.0
4
0.85
12
0.6
2.3 2.3
0.8
3
1.55.5
7.0
2.5
0.5
1.2
0 to 0.2
2.3
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003 TS IM TA-3882
No.7421-1/4
Page 2
www.DataSheet4U.com
2SJ633
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --16 A
Tc=25°C15W
Electrical Characteristics at Ta=25°C
--60 V
±20 V
--4 A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 365 pF
Output Capacitance Coss VDS=--20V, f=1MHz 39 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 30 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 33 ns
Fall Time t
Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--4A 9 nC
Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--4A 1.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--4A 1.7 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--2A, VGS=--10V 280 365 mΩ
RDS(on)2 ID=--2A, VGS=--4V 405 565 mΩ
r
f
SD
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --1 µA
VGS=±16V , VDS=0 ±10 µA
VDS=--10V, ID=--2A 1.5 3 S
See specified Test Circuit. 45 ns
See specified Test Circuit. 41 ns
IS=--4A, VGS=0 --0.9 --1.2 V
min typ max
Ratings
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --2A
RL=15Ω
V
OUT
Unit
P.G
50Ω
2SJ633
S
No.7421-2/4
Page 3
www.DataSheet4U.com
2SJ633
I
I
-- V
--4.0
--3.5
--3.0
-- A
--2.5
D
--2.0
--6.0V
--8.0V
--10.0V
D
--5.0V
--4.0V
--3.5V
DS
-- A
D
--8
VDS= --10V
--7
--6
--5
--4
D
-- V
GS
Tc= --25°C
75°C
25°C
--1.5
Drain Current, I
--1.0
--0.5
0
0 --1.0--0.5 --2.0--1.5 --3.0 --3.5--2.5 --4.0
800
750
700
650
600
(on) -- mΩ
550
DS
500
450
400
350
300
250
200
Static Drain-to-Source
On-State Resistance, R
150
100
0 --2 --4 --6
10
7
5
fs -- S
y
3
2
1.0
7
5
3
2
Drain-to-Source V oltage, V
RDS(on) -- V
--8 --20--10 --12 --14 --16 --18
Gate-to-Source V oltage, V
yfs -- I
Tc= --25
DS
GS
GS
D
C
°
C
°
75
C
°
25
Forward Transfer Admittance,
0.1
23 23 757575
100
Switching Time, SW Time -- ns
--0.01
3
VDD= --30V
2
VGS= --10V
7
5
3
2
10
7
5
3
2
--0.1
Drain Current, I
SW Time -- I
t
f
23 23
t
d
5
Drain Current, I
(off)
t
r
td(on)
7
--1.0
D
D
--1.0--0.1
-- A
D
-- A
VGS= --3.0V
-- V
IT05810
Tc=25°C
ID= --2A
-- V
IT05823
VDS= --10V
3
2
IT05825
IT05816
--10
--3
Drain Current, I
--2
--1
0
0
--2--1
Gate-to-Source V oltage, V
800
750
700
650
600
550
(on) -- mΩ
500
DS
450
400
350
300
250
200
150
Static Drain-to-Source
On-State Resistance, R
100
50
0
--60 --20--40 200 40 60 80 100 120 140
RDS(on) -- Tc
--2
=
I
D
=
I
D
Case Temperature, Tc -- °C
I
--10
7
5
3
2
-- A
F
--1.0
7
5
3
2
--0.1
7
5
Forward Drain Current, I
3
2
--0.01
F
--0.6 --0.8--0.4 --1.0 --1.2--0.2
Diode Forward V oltage, V
1000
7
5
3
2
100
7
5
Ciss, Coss, Crss -- pF
3
2
10
5
0
Ciss, Coss, Crss -- V
Drain-to-Source V oltage, V
Tc=75°C
A, V
--2
-- V
Tc=75°C
GS
A, V
--25°
SD
C
°
25
25
C
°
=
GS
C
--
--25
4V
=
C
°
GS
--
SD
DS
10V
-- V
-- V
DS
Ciss
Coss
Crss
-- V
--6--5--4--3
IT05822
IT05824
VGS=0
IT05826
f=1MHz
--30--10 --15 --20 --25--5
IT05817
No.7421-3/4
Page 4
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V
-- Qg
--10
VDS= --30V
--9
ID= --4A
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1
0
012345678910
GS
Total Gate Charge, Qg -- nC
P
-- Ta
1.2
D
IT05827
2SJ633
3
I
= --16A
2
DP
--10
7
5
I
= --4A
D
-- A
D
3
2
--1.0
7
5
Drain Current, I
3
2
Tc=25°C
Single pulse
--0.1
23 57 23 57 725
--0.1
20
A S O
DC operation
Operation in this area
is limited by RDS(on).
Drain-to-Source V oltage, V
P
-- Tc
D
10ms
DS
1ms
-- V
≤10µs
100
µ
3
s
--100--1.0 --10
IT05828
1.0
-- W
D
0.8
No heat sink
0.6
0.4
0.2
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
IT05829
-- W
D
15
10
5
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT05830
This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.
No.7421-4/4
PS
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