SANYO 2 SJ 633 Service Manual
www.DataSheet4U.com
Ordering number : ENN7421
2SJ633
P-Channel Silicon MOSFET
2SJ633
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
Package Dimensions
unit : mm
2083B
[2SJ633]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
1.5
5.5
1.6
Package Dimensions
unit : mm
2092B
7.0
7.5
2.3
0.5
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
[2SJ633]
6.5
5.0
4
0.85
12
0.6
2.3 2.3
0.8
3
1.55.5
7.0
2.5
0.5
1.2
0 to 0.2
2.3
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003 TS IM TA-3882
No.7421-1/4
www.DataSheet4U.com
2SJ633
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --16 A
Tc=25°C15W
Electrical Characteristics at Ta=25°C
--60 V
±20 V
--4 A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 365 pF
Output Capacitance Coss VDS=--20V, f=1MHz 39 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 30 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 33 ns
Fall Time t
Total Gate Charge Qg VDS=--30V, VGS=--10V, ID=--4A 9 nC
Gate-to-Source Charge Qgs VDS=--30V, VGS=--10V, ID=--4A 1.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--30V, VGS=--10V, ID=--4A 1.7 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--2A, VGS=--10V 280 365 mΩ
RDS(on)2 ID=--2A, VGS=--4V 405 565 mΩ
r
f
SD
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --1 µA
VGS=±16V , VDS=0 ±10 µA
VDS=--10V, ID=--2A 1.5 3 S
See specified Test Circuit. 45 ns
See specified Test Circuit. 41 ns
IS=--4A, VGS=0 --0.9 --1.2 V
min typ max
Ratings
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --2A
RL=15Ω
V
OUT
Unit
P.G
50Ω
2SJ633
S
No.7421-2/4
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