Ordering number : ENN7421
2SJ633
P-Channel Silicon MOSFET
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2SJ633 |
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DC / DC Converter Applications |
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Features |
Package Dimensions |
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• Low ON-resistance. |
unit : mm |
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• Ultrahigh-speed switching. |
2083B |
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4V drive. |
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[2SJ633] |
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6.5 |
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1.5 |
2.3 |
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5.0 |
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4 |
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0.5 |
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5.5 |
7.0 |
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0.85 |
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0.7 |
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1.2 |
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0.8 |
1.6 |
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7.5 |
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0.6 |
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0.5 |
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1 |
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3 |
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1 : Gate |
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2 : Drain |
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3 : Source |
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4 : Drain |
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2.3 |
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2.3 |
SANYO : TP |
www.DataSheet4U.com
Package Dimensions
unit : mm
2092B
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[2SJ633] |
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6.5 |
1.5 |
2.3 |
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5.0 |
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4 |
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5.5 |
7.0 |
0.85 |
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0.5 |
1 |
2 |
0.8 |
3 |
2.5 |
0.6 |
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1.2 |
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0 to 0.2 |
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
2.3 |
2.3 |
SANYO : TP-FA |
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O1003 TS IM TA-3882 No.7421-1/4
2SJ633
Specifications
Absolute Maximum Ratings at Ta=25°C
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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Drain-to-Source Voltage |
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VDSS |
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--60 |
V |
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Gate-to-Source Voltage |
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VGSS |
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±20 |
V |
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Drain Current (DC) |
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ID |
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--4 |
A |
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Drain Current (Pulse) |
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IDP |
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PW£10ms, duty cycle£1% |
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--16 |
A |
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Allowable Power Dissipation |
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PD |
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1 |
W |
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Tc=25°C |
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15 |
W |
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Channel Temperature |
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Tch |
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150 |
°C |
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Storage Temperature |
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Tstg |
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--55 to +150 |
°C |
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Electrical Characteristics at Ta=25°C |
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Parameter |
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Symbol |
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Conditions |
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Ratings |
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Unit |
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min |
typ |
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max |
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Drain-to-Source Breakdown Voltage |
V(BR)DSS |
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ID=--1mA, VGS=0 |
--60 |
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V |
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Zero-Gate Voltage Drain Current |
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IDSS |
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VDS=--60V, VGS=0 |
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--1 |
mA |
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Gate-to-Source Leakage Current |
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IGSS |
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VGS=±16V, VDS=0 |
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±10 |
mA |
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Cutoff Voltage |
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VGS(off) |
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VDS=--10V, ID=--1mA |
--1.2 |
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--2.6 |
V |
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Forward Transfer Admittance |
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½yfs½ |
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VDS=--10V, ID=--2A |
1.5 |
3 |
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S |
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Static Drain-to-Source On-State Resistance |
RDS(on)1 |
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ID=--2A, VGS=--10V |
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280 |
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365 |
mW |
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RDS(on)2 |
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ID=--2A, VGS=--4V |
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405 |
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565 |
mW |
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Input Capacitance |
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Ciss |
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VDS=--20V, f=1MHz |
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365 |
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pF |
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Output Capacitance |
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Coss |
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VDS=--20V, f=1MHz |
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39 |
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pF |
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Reverse Transfer Capacitance |
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Crss |
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VDS=--20V, f=1MHz |
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30 |
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pF |
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Turn-ON Delay Time |
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td(on) |
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See specified Test Circuit. |
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9 |
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ns |
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Rise Time |
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tr |
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See specified Test Circuit. |
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45 |
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ns |
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Turn-OFF Delay Time |
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td(off) |
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See specified Test Circuit. |
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33 |
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ns |
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Fall Time |
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tf |
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See specified Test Circuit. |
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41 |
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ns |
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Total Gate Charge |
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Qg |
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VDS=--30V, VGS=--10V, ID=--4A |
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9 |
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nC |
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www.DataSheet4U.com |
Gate-to-Source Charge |
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Qgs |
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VDS=--30V, VGS=--10V, ID=--4A |
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1.7 |
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nC |
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Gate-to-Drain “Miller” Charge |
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Qgd |
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VDS=--30V, VGS=--10V, ID=--4A |
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1.7 |
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nC |
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Diode Forward Voltage |
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VSD |
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IS=--4A, VGS=0 |
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--0.9 |
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--1.2 |
V |
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Switching Time Test Circuit |
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VDD= --30V |
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VIN |
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ID= --2A |
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0V |
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--10V |
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RL=15W |
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VOUT |
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VIN |
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D |
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PW=10ms |
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D.C.≤ 1% |
G |
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P.G |
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50W |
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2SJ633 |
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No.7421-2/4
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