SANYO 2 SJ 628 Service Manual

Ordering number : ENN7271

2SJ628

P-Channel Silicon MOSFET

2SJ628

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

•	Low ON-resistance.	unit : mm
•	Ultrahigh-speed switching.	2062A
•	1.8V drive.

0.4

Specifications

Absolute Maximum Ratings at Ta=25°C

[2SJ628]

4.5

	1.6			1.5
		2.5	4.25max
	0.5	1.0
3 1.5	2	1		0.4
	3.0
(Bottom view)			1	: Gate
0.75			2	: Drain
			3	: Source

SANYO : PCP

	Parameter	Symbol	Conditions				Ratings			Unit
www.DataSheet4U.com	Drain-to-Source Voltage	VDSS						--12		V
	Gate-to-Source Voltage	VGSS						±8		V
	Drain Current (DC)	ID						--2.5		A
	Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--10		A
	Allowable Power Dissipation	PD	Mounted on a ceramic board (250mm2 0.8mm)					1.0		W
			Tc=25°C					3.5		W
	Channel Temperature	Tch						150		°C
	Storage Temperature	Tstg						--55 to +150		°C
Electrical Characteristics at Ta=25°C
	Parameter	Symbol	Conditions				Ratings			Unit
					min		typ		max
	Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0		--12					V
	Zero-Gate Voltage Drain Current	IDSS	VDS=--12V, VGS=0						--10	mA
	Gate-to-Source Leakage Current	IGSS	VGS=±6.4V, VDS=0						±10	mA
	Cutoff Voltage	VGS(off)	VDS=--6V, ID=--1mA		--0.3				--1.0	V
	Forward Transfer Admittance	½yfs½	VDS=--6V, ID=--1.3A		2.1		3.0			S
		RDS(on)1	ID=--1.3A, VGS=--4.5V				120		155	mW
	Static Drain-to-Source On-State Resistance	RDS(on)2	ID=--0.7A, VGS=--2.5V				170		240	mW
		RDS(on)3	ID=--0.2A, VGS=--1.8V				230		360	mW
Marking : MB							Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72502 TS IM TA-100054 No.7271-1/4

2SJ628

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=--6V, f=1MHz			310		pF
Output Capacitance	Coss	VDS=--6V, f=1MHz			90		pF
Reverse Transfer Capacitance	Crss	VDS=--6V, f=1MHz			80		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.			15		ns
Rise Time	tr	See specified Test Circuit.			70		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			50		ns
Fall Time	tf	See specified Test Circuit.			52		ns
Total Gate Charge	Qg	VDS=--6V, VGS=--4.5V, ID=--2.5A			4.6		nC
Gate-to-Source Charge	Qgs	VDS=--6V, VGS=--4.5V, ID=--2.5A			0.7		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--6V, VGS=--4.5V, ID=--2.5A			1.3		nC
Diode Forward Voltage	VSD	IS=--2.5A, VGS=0			--0.93	--1.5	V

Switching Time Test Circuit

VIN		VDD= --6V
0V
--4.5V
	VIN		ID= --1.3A
			RL=4.62Ω
PW=10μs		D	VOUT
D.C.≤ 1%
	G
	50Ω		2SJ628
P.G			S

	--2.0							ID -- VDS
										. 0V
	--1.8						. 5V		3		.5V
								--			2
					--	3					--
	--1.6
					5V
A	--1.4	--	4	.
--													8V
													.
												1
D	--1.2											--
I
Current,	--1.0												1.5V
												--
	--0.8
Drain	--0.6
	--0.4
	--0.2											VGS= --1.0V
	0
	0	--0.1						--0.2			--0.3		--0.4	--0.5
		Drain-to-Source Voltage, VDS										-- V		IT04769

	400						RDS(on) -- VGS
															Ta=25°C
mΩ
--	300
(on)
DS
		ID= --0.7A
Source-to-DrainStatic Resistance,State-OnR
	200						--1.3A
	100
	0
	0	--1		--2			--3		--4		--5		--6		--7		--8
				Gate-to-Source Voltage, VGS									-- V			IT04771

Drain Current, ID -- A

On-State Resistance, RDS(on) -- mΩ

Static Drain-to-Source

ID -- VGS

--2.0
	VDS= --6V
--1.8
--1.6
--1.4
--1.2
--1.0
--0.8
															°	C
--0.6														Ta=75					25		°
--0.4
																	25	°	C
--0.2
																--
0
0			--0.5									--1.0									--1.5				--2.0
				Gate-to-Source Voltage, VGS -- V																					IT04770
400							RDS(on)									-- Ta
300
																			.8V
																		1
										.2A,		VGS			=--
									0
					I =			--
						D													2.5V
200																=		--
										0.7A,			VGS
						I	=		--
						D														.5V
																	= --4
						I				.3A,VGS
								= --1
100						D
0
--60 --40			--20 0					20 40 60											80 100 120						140 160
				Ambient Temperature, Ta -- °C																					IT04772

No.7271-2/4