Sanyo 2SJ616 Specifications
Ordering number : ENN7270
Preliminary
2SJ616
P-Channel Silicon MOSFET
2SJ616
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
•
Ultrahigh-speed switching.
•
4V drive.
Package Dimensions
unit : mm
2062A
[2SJ616]
4.5
1.6
0.4
0.5
2
3
1.5
3.0
(Bottom view)
0.75
1
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
SANYO : PCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --24 A
Mounted on a ceramic board (250mm
T c=25°C 3.5 W
2
✕0.8mm) 1.5 W
--30 V
±20 V
--6 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--3A, VGS=--10V 53 69 mΩ
RDS(on)2 ID=--1.5A, VGS=--4V 105 147 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--3A 2.9 4.2 S
Marking : JW Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
72502 TS IM TA-100075
No.7270-1/4
2SJ616
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 510 pF
Output Capacitance Coss VDS=--10V, f=1MHz 115 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 34 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--6A 11 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--6A 2.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--6A 1.7 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 12 ns
r
See specified Test Circuit. 23.5 ns
f
IS=--6A, VGS=0 --0.9 --1.5 V
Switching Time Test Circuit
G
VDD= --15V
ID= --3A
RL=5Ω
D
V
OUT
--10V
V
IN
0V
PW=10µs
D.C.≤1%
V
IN
Ratings
min typ max
Unit
P.G
--4.0
--3.5
--3.0
-- A
--2.5
D
--2.0
--1.5
Drain Current, I
--1.0
--0.5
0
0
--8.0V
--10.0V
--0.2
--6.0V
Drain-to-Source V oltage, V
300
250
(on) -- mΩ
200
RDS(on) -- V
DS
150
--3A
ID= --1.5A
100
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10
Gate-to-Source V oltage, V
I
-- V
D
--4.0V
--4.5V
--0.5 --1.0--0.8 --0.9--0.1 --0.3 --0.4 --0.6 --0.7
50Ω
DS
--3.5V
S
--3.0V
= --2.5V
V
GS
-- V
DS
GS
--12 --14 --16
-- V
GS
2SJ616
IT04757
Tc=25°C
IT04759
I
-- V
-- A
--6
VDS= --10V
--5
--4
D
GS
D
--3
--2
Drain Current, I
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
200
150
RDS(on) -- Ta
(on) -- mΩ
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
= --1.5A, V
I
D
= --3A, V
I
D
GS
GS
Tc=75°C
GS
= --4V
= --10V
--25°C
-- V
Ambient Temperature, Ta -- °C
25°C
IT04758
IT04760
No.7270-2/4
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