Ordering number : ENN7179
Preliminary
2SJ615
P-Channel Silicon MOSFET
2SJ615
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2062A
[2SJ615]
4.5
1.6
0.4
0.5
2
3
1.5
3.0
(Bottom view)
0.75
1
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
SANYO : PCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --10 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W
2
✕0.8mm) 1.0 W
--30 V
±20 V
--2.5 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1.3A, VGS=--10V 210 270 mΩ
RDS(on)2 ID=--0.7A, VGS=--4V 330 460 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--1.3A 1.1 1.6 S
Marking : JV Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3523
No.7179-1/4
2SJ615
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2.5A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--01V, ID=--2.5A 0.7 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 22 ns
r
See specified Test Circuit. 7.5 ns
f
IS=--2.5A, VGS=0 --0.97 --1.5 V
Switching Time Test Circuit
G
VDD= --15V
ID= --1.3A
RL=11.5Ω
D
V
OUT
--10V
V
IN
0V
PW=10µs
D.C.≤1%
V
IN
Ratings
min typ max
Unit
P.G
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--8V
--10V
--0.2
Drain-to-Source V oltage, V
800
700
600
(on) -- mΩ
500
DS
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
ID= --0.7A
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
Gate-to-Source V oltage, V
I
-- V
D
--6V
--5V
--0.5 --1.0--0.8 --0.9--0.1 --0.3 --0.4 --0.6 --0.7
--1.3A
50Ω
DS
--4V
V
GS
DS
GS
--7 --8 --9 --10
GS
= --3V
-- V
-- V
S
Tc=25°C
2SJ615
IT02665
IT04264
I
-- V
D
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
600
500
(on) -- mΩ
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Tc
= --0.7A, V
I
D
= --1.3A, V
I
D
GS
GS
GS
Tc=75°C
= --4V
--25°C
GS
= --10V
25°C
-- V
Case Temperature, Tc -- °C
IT04263
IT04265
No.7179-2/4
2SJ615
fs -- S
y
Forward Transfer Admittance,
Switching Time, SW Time -- ns
1.0
0.1
100
--0.01
10
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Tc= --25
23 57
Drain Current, I
SW Time -- I
td(on)
yfs -- I
D
°C
25°C
75°C
23 57 23
--0.1
D
-- A
D
t
(off)
d
t
f
t
r
VDS= --10V
--1.0
IT04266
VDD= --15V
VGS= --10V
I
-- V
F
Tc=75°C
SD
25°C
--25°C
-- V
SD
DS
Ciss
Coss
Crss
--10
7
5
3
2
-- A
--1.0
F
7
5
3
2
--0.1
7
Forward Current, I
5
3
2
--0.01
0 --0.6--0.4--0.2 --0.8 --1.0 --1.2 --1.4
Diode Forward V oltage, V
Ciss, Coss, Crss -- V
Ciss, Coss, Crss -- pF
1000
7
5
3
2
100
7
5
3
2
VGS=0
IT04267
f=1MHz
1.0
3
--10
--8
-- V
GS
--6
--4
--2
Gate-to-Source V oltage, V
0
0
1.2
1.0
-- W
D
0.8
57
VDS= --10V
ID= --2.5A
--0.1
23 57 23
Drain Current, I
D
--1.0
-- A
VGS -- Qg
Total Gate Charge, Qg -- nC
P
-- Ta
D
Mounted on a ceramic board(250mm
IT04268
IT04269
10
0
--5
Drain-to-Source V oltage, V
2
I
= --10A
DP
--10
7
5
I
= --2.5A
D
3
2
-- A
--1.0
D
7
5
Operation in this area
3
is limited by RDS(on).
2
--0.1
Drain Current, I
7
5
3
Ta=25°C
2
Single pulse
Mounted on a ceramic board(250mm
5.04.53.5 4.02.0 2.5 3.01.00.5 1.5
--0.01
23 57 23 57 23 5
--0.1
A S O
DC operation
--1.0 --10
Drain-to-Source V oltage, V
P
-- Tc
4.0
3.5
-- W
D
3.0
2.5
D
DS
10ms
100ms
2
DS
-- V
<10µs
100µs
1ms
✕0.8mm)
-- V
--30--10 --15 --20 --25
IT02671
IT04270
0.6
0.4
0.2
Allowable Power Dissipation, P
0020 40
2
60
80 100 120
Ambient Temperature, Ta -- °C
✕0.8mm)
140 160
IT04271
2.0
1.5
1.0
0.5
Allowable Power Dissipation, P
0020 40 60 80 100 120
Case Temperature, Tc -- °C
140 160
IT04272
No.7179-3/4
2SJ615
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of April, 2002. Specifications and information herein are subject
to change without notice.
No.7179-4/4
PS
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