Sanyo 2SJ615 Specifications
Ordering number : ENN7179
Preliminary
2SJ615
P-Channel Silicon MOSFET
2SJ615
Ultrahigh-Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2062A
[2SJ615]
4.5
1.6
0.4
0.5
2
3
1.5
3.0
(Bottom view)
0.75
1
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
SANYO : PCP
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --10 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W
2
✕0.8mm) 1.0 W
--30 V
±20 V
--2.5 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.2 --2.6 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1.3A, VGS=--10V 210 270 mΩ
RDS(on)2 ID=--0.7A, VGS=--4V 330 460 mΩ
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--1.3A 1.1 1.6 S
Marking : JV Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41002 TS IM TA-3523
No.7179-1/4
2SJ615
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--10V, f=1MHz 185 pF
Output Capacitance Coss VDS=--10V, f=1MHz 30 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 19 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--2.5A 4.7 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--2.5A 0.8 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--01V, ID=--2.5A 0.7 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 22 ns
r
See specified Test Circuit. 7.5 ns
f
IS=--2.5A, VGS=0 --0.97 --1.5 V
Switching Time Test Circuit
G
VDD= --15V
ID= --1.3A
RL=11.5Ω
D
V
OUT
--10V
V
IN
0V
PW=10µs
D.C.≤1%
V
IN
Ratings
min typ max
Unit
P.G
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0
--8V
--10V
--0.2
Drain-to-Source V oltage, V
800
700
600
(on) -- mΩ
500
DS
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
ID= --0.7A
0
0 --1 --2 --3 --4 --5 --6
RDS(on) -- V
Gate-to-Source V oltage, V
I
-- V
D
--6V
--5V
--0.5 --1.0--0.8 --0.9--0.1 --0.3 --0.4 --0.6 --0.7
--1.3A
50Ω
DS
--4V
V
GS
DS
GS
--7 --8 --9 --10
GS
= --3V
-- V
-- V
S
Tc=25°C
2SJ615
IT02665
IT04264
I
-- V
D
--2.0
VDS= --10V
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
Gate-to-Source V oltage, V
600
500
(on) -- mΩ
400
DS
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
RDS(on) -- Tc
= --0.7A, V
I
D
= --1.3A, V
I
D
GS
GS
GS
Tc=75°C
= --4V
--25°C
GS
= --10V
25°C
-- V
Case Temperature, Tc -- °C
IT04263
IT04265
No.7179-2/4
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