Sanyo 2SJ612 Specifications

Ordering number : ENN7178

2SJ612

P-Channel Silicon MOSFET

2SJ612

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

•	Low ON-resistance.	unit : mm
•	Ultrahigh-speed switching.	2062A
•	2.5V drive.

0.4

Specifications

Absolute Maximum Ratings at Ta=25°C

[2SJ612]

4.5

	1.6			1.5
		2.5	4.25max
	0.5	1.0
3 1.5	2	1		0.4
	3.0
(Bottom view)			1	: Gate
0.75			2	: Drain
			3	: Source

SANYO : PCP

Parameter	Symbol	Conditions				Ratings			Unit
Drain-to-Source Voltage	VDSS						--20		V
Gate-to-Source Voltage	VGSS						±10		V
Drain Current (DC)	ID						--2.5		A
Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%					--10		A
Allowable Power Dissipation	PD	Mounted on a ceramic board (250mm2 0.8mm)					1.0		W
		Tc=25°C					3.5		W
Channel Temperature	Tch						150		°C
Storage Temperature	Tstg						--55 to +150		°C
Electrical Characteristics at Ta=25°C
Parameter	Symbol	Conditions				Ratings			Unit
				min		typ		max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0		--20					V
Zero-Gate Voltage Drain Current	IDSS	VDS=--20V, VGS=0						--1	mA
Gate-to-Source Leakage Current	IGSS	VGS=±8V, VDS=0						±10	mA
Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA		--0.4				--1.3	V
Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--1.3A		2.0		2.8			S
Static Drain-to-Source On-State Resistance	RDS(on)1	ID=--1.3A, VGS=--4V				190		245	mW
	RDS(on)2	ID=--0.7A, VGS=--2.5V				250		350	mW
Marking : JS						Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41002 TS IM TA-3522 No.7178-1/4

2SJ612

Continued from preceding page.

Parameter	Symbol	Conditions			Ratings		Unit
				min	typ	max
Input Capacitance	Ciss	VDS=--10V, f=1MHz			290		pF
Output Capacitance	Coss	VDS=--10V, f=1MHz			40		pF
Reverse Transfer Capacitance	Crss	VDS=--10V, f=1MHz			25		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit.			10		ns
Rise Time	tr	See specified Test Circuit.			60		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit.			27		ns
Fall Time	tf	See specified Test Circuit.			32		ns
Total Gate Charge	Qg	VDS=--10V, VGS=--4V, ID=--2.5A			3.2		nC
Gate-to-Source Charge	Qgs	VDS=--10V, VGS=--4V, ID=--2.5A			0.8		nC
Gate-to-Drain “Miller” Charge	Qgd	VDS=--10V, VGS=--4V, ID=--2.5A			0.6		nC
Diode Forward Voltage	VSD	IS=--2.5A, VGS=0			--0.96	--1.5	V

Switching Time Test Circuit

0V

VIN

VDD= --10V

--4V

VIN

ID= --1.3A

RL=7.69Ω

D

PW=10μs

VOUT

D.C.≤ 1%

G

2SJ612

50Ω

P.G

S

Drain Current, ID -- A

--2.0 --1.8

--1.6

--1.4

--1.2 --1.0

--0.8

--0.6

--0.4

4. 0V --

6. 0V --

			ID -- VDS
--	3	.	0V	--	2	.	5V
							.0V
							2
							--

V	= --1.5V
GS

	--0.2
	0
	0	--0.1		--0.2			--0.3 --0.4 --0.5						--0.6 --0.7 --0.8					--0.9		--1.0
				Drain-to-Source Voltage, VDS												-- V		IT02654
	600							RDS(on) -- VGS
																	Tc=25°C
mΩ	500
--
(on)	400
DS
Source-to-DrainStatic Resistance,State-OnR	300
								--	1.3A
	200	ID= --0.7A
	100
	0
	0	--1		--2			--3 --4 --5						--6 --7			--8		--9		--10
				Gate-to-Source Voltage, VGS												-- V		IT04255

ID -- VGS

		--2.0
																									V	DS= --10V
		--1.8
A		--1.6
		--1.4
--
D		--1.2
I
Current,		--0.8
Drain		--1.0
		--0.6										Tc=75	° C							25	°
		--0.4
																	°	C
																25
		--0.2
														--
		0
		0			--0.5						--1.0								--1.5					--2.0				--2.5
						Gate-to-Source Voltage, VGS -- V																						IT04254
		500								RDS(on) -- Tc
mΩ		400
	--
	(on)
	DS300																						.5V
																						2
																			=--
Source-to-DrainStatic	Resistance,State-OnR												VGS
												.7A,
											0
									I	=	--												4.0V
									D										=
												1.3A,				VGS
												--
		200								I	=
										D
		100
		0
		--60 --40			--20			0 20 40							60 80									100 120				140 160
								Case Temperature, Tc --																°C				IT04256

No.7178-2/4