SANYO 2SJ609 Datasheet
Ordering number : ENN6671
2SJ609
P-Channel Silicon MOSFET
2SJ609
DC / DC Converter Applications
Features
• Low ON-resistance.
•
Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2190
1.6
0.8
0.8
0.75
1.0
1
8.0
4.0
1.0
23
1.5
3.0
1.4
7.5
3.0
[2SJ609]
11.0
15.5
3.3
0.7
1 : Source
2 : Drain
3 : Gate
2.4
Specifications
4.8
1.7
SANYO : TO-126ML
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --20 A
Tc=25°C10W
--60 V
±20 V
--5 A
1W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
(BR)DSSID
DSS
GSS
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ratings
min typ max
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
Unit
Continued on next page.
90100 TS IM TA-2920
No.6671-1/4
2SJ609
Continued from preceding page.
Parameter Symbol Conditions
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 350 pF
Output Capacitance Coss VDS=--20V, f=1MHz 90 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 25 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 37 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--5A 12 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--5A 1.7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--5A 2.9 nC
Diode Forward Voltage V
yfs
RDS(on)1 ID=--3A, VGS=--10V 225 295 mΩ
RDS(on)2 ID=--1A, VGS=--4V 305 425 mΩ
SD
VDS=--10V, ID=--3A 3.2 4.6 S
See specified Test Circuit 15 ns
r
See specified Test Circuit 28 ns
f
IS=--5A, VGS=0 --0.91 --1.2 V
min typ max
Switching Time Test Circuit
Ratings
Unit
0V
--10V
PW=10µs
D.C.≤1%
P.G
--5.0
--4.5
--4.0
--3.5
-- A
D
--3.0
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5
0
0
G
50Ω
-- V
--5.0V
VDD= --30V
ID= --3A
RL=10Ω
D
S
DS
V
2SJ609
--4.0V
OUT
V
IN
V
IN
I
D
--6.0V
--8.0V
--3.5V
--10.0V
--3.0V
= --2.5V
V
GS
--0.4 --0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source V oltage, V
DS
-- V
IT02593
--10
VDS= --10V
--9
--8
--7
-- A
D
--6
--5
--4
--3
Drain Current, I
--2
--1
0
I
-- V
D
GS
°C
Tc= --25
--1.0 --2.0 --3.0 --4.0 --5.0--0.5 --1.5 --2.5 --3.5 --4.5
Gate-to-Source V oltage, V
GS
-- V
IT02594
No.6671-2/4
25
75°C
°C
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