Ordering number : ENN6995
2SJ608
P-Channel Silicon MOSFET
2SJ608
Ultrahigh Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh speed switching.
• Low-voltage drive.
• Mounting height 9.5mm.
• Meets radial taping.
Package Dimensions
unit : mm
2085A
[2SJ608]
10.5
1.2
0.5
123
1.6
1.0
8.5
7.5
1.9
1.2
4.5
0.5
2.6
1.4
1 : Source
2 : Drain
Specifications
2.5 2.5
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --16 A
3 : Gate
SANYO : FLP
--30 V
±20 V
--4 A
1.4 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--2A 2.9 4.2 S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-2989
No.6995-1/4
Unit
2SJ608
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--2A, VGS=--10V 60 78 mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 560 pF
Output Capacitance Coss VDS=--10V, f=1MHz 150 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 95 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 70 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 12 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2 nC
Diode Forward Voltage V
RDS(on) 2 ID=--1A, VGS=--4.5V 90 126 mΩ
RDS(on) 3 ID=--1A, VGS=--4V 100 140 mΩ
See specified Test Circuit 4 ns
r
See specified Test Circuit 55 ns
f
SD
IS=--4A, VGS=0 --0.88 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit
V
IN
0V
--10V
V
PW=10µs
D.C.≤1%
P.G
I
--6
--5
--4
-- A
D
--3
--2
Drain Current, I
--1
0
0 --0.2
200
Drain-to-Source V oltage, VDS -- V
D
--6.0V
--10.0V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
RDS(on) -- V
IN
50Ω
-- V
G
--4.5V
DS
--4.0V
VDD= --15V
D
--3.5V
GS
ID= --2A
RL=7.5Ω
2SJ608
S
--3.0V
--2.5V
VGS= --2.0V
IT02844
Ta=25°C
V
OUT
I
-- V
--9
--8
--7
--6
-- A
D
--5
--4
--3
Drain Current, I
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
D
25°C
GS
Ta=75°C
VDS= --10V
25°C
°C
--25
Ta=
°C
--25
Gate-to-Source V oltage, VGS -- V
200
RDS(on) -- Ta
°C
75
IT02845
150
(on) -- mΩ
--2.0A
DS
100
ID= --1.0A
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
IT02846
150
(on) -- mΩ
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60
--40 --20 0 20 40 60 80 100 120 160140
I
= --2.0A, V
I
D
= --1.0A, V
D
I
= --10.0V
GS
= --4.0V
GS
= --1.0A, V
D
= --4.5V
GS
No.6995-2/4
IT02847
2SJ608
Forward Transfer Admittance, yfs -- S
100
1.0
0.1
yfs -- I
7
5
3
2
10
7
5
3
2
7
5
3
2
Ta= --25°C
75°C
--0.1--0.01 --1.0
25°C
D
VDS= --10V
35723 5723 57
2
Drain Current, ID -- A
Switching Time, SW Time -- ns
1000
100
1.0
--12
SW Time -- I
7
5
3
2
t
7
5
3
2
10
7
5
3
2
--0.1
t
f
23 57 23 57
d
t
r
--1.0
Drain Current, I
VGS -- Qg
(off)
t
d
(on)
D
D
VDD= --15V
VGS= --10V
-- A
VDS= --10V
ID= --4A
--10
-- V
GS
--8
--6
--4
--2
Gate-to-Source V oltage, V
0
02468101214
Total Gate Charge, Qg -- nC
P
-- Ta
2.0
D
IT02848
IT02850
IT02852
--10
--10
I
-- V
F
25°C
SD
--25°C
--10
7
5
3
2
--1.0
7
5
-- A
F
3
2
--0.1
7
5
3
2
--0.01
Forward Current, I
7
5
3
2
--0.001
0 --0.4--0.2 --0.6 --0.8 --1.2--1.0
Ta=75°C
Diode Forward V oltage, VSD -- V
1000
7
5
3
2
100
7
5
Ciss, Coss, Crss -- pF
3
2
10
0 --5 --10 --15 --20
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
Drain-to-Source V oltage, V
3
I
= --16A
DP
2
--10
7
I
= --4A
D
5
3
-- A
2
D
--1.0
7
5
3
Operation in this
2
area is limited by RDS(on).
--0.1
Drain Current, I
7
5
3
Ta=25°C
2
Single pulse
--0.01
23 57 23 5 23 57
--0.1
A S O
DC operation
--1.0
Drain-to-Source V oltage, V
DS
10ms
100ms
--10
DS
DS
-- V
1ms
-- V
VGS=0
IT02849
f=1MHz
IT02851
<10µs
100µs
IT03270
-- W
D
1.5
1.4
1.0
0.5
Allowable Power Dissipation, P
0020 40
60
80 100 120
Ambient Temperature, Ta -- °C
140 160
IT03271
No.6995-3/4
2SJ608
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of June, 2001. Specifications and information herein are subject
to change without notice.
No.6995-4/4
PS
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