Sanyo 2SJ608 Specifications
Ordering number : ENN6995
2SJ608
P-Channel Silicon MOSFET
2SJ608
Ultrahigh Speed Switching Applications
Features
•
Low ON-resistance.
• Ultrahigh speed switching.
• Low-voltage drive.
• Mounting height 9.5mm.
• Meets radial taping.
Package Dimensions
unit : mm
2085A
[2SJ608]
10.5
1.2
0.5
123
1.6
1.0
8.5
7.5
1.9
1.2
4.5
0.5
2.6
1.4
1 : Source
2 : Drain
Specifications
2.5 2.5
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 ° C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --16 A
3 : Gate
SANYO : FLP
--30 V
±20 V
--4 A
1.4 W
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
(BR)DSSID
DSS
GSS
yfs
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --1 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--2A 2.9 4.2 S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62501 TS IM TA-2989
No.6995-1/4
Unit
2SJ608
Continued from preceding page.
Parameter Symbol Conditions
RDS(on) 1 ID=--2A, VGS=--10V 60 78 mΩ
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 560 pF
Output Capacitance Coss VDS=--10V, f=1MHz 150 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 95 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 70 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 12 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 2 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 2 nC
Diode Forward Voltage V
RDS(on) 2 ID=--1A, VGS=--4.5V 90 126 mΩ
RDS(on) 3 ID=--1A, VGS=--4V 100 140 mΩ
See specified Test Circuit 4 ns
r
See specified Test Circuit 55 ns
f
SD
IS=--4A, VGS=0 --0.88 --1.5 V
Ratings
min typ max
Unit
Switching Time Test Circuit
V
IN
0V
--10V
V
PW=10µs
D.C.≤1%
P.G
I
--6
--5
--4
-- A
D
--3
--2
Drain Current, I
--1
0
0 --0.2
200
Drain-to-Source V oltage, VDS -- V
D
--6.0V
--10.0V
--0.4 --0.6 --0.8 --1.0--0.1 --0.3 --0.5 --0.7 --0.9
RDS(on) -- V
IN
50Ω
-- V
G
--4.5V
DS
--4.0V
VDD= --15V
D
--3.5V
GS
ID= --2A
RL=7.5Ω
2SJ608
S
--3.0V
--2.5V
VGS= --2.0V
IT02844
Ta=25°C
V
OUT
I
-- V
--9
--8
--7
--6
-- A
D
--5
--4
--3
Drain Current, I
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
D
25°C
GS
Ta=75°C
VDS= --10V
25°C
°C
--25
Ta=
°C
--25
Gate-to-Source V oltage, VGS -- V
200
RDS(on) -- Ta
°C
75
IT02845
150
(on) -- mΩ
--2.0A
DS
100
ID= --1.0A
50
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
Gate-to-Source V oltage, VGS -- V Ambient Temperature, Ta -- °C
IT02846
150
(on) -- mΩ
DS
100
50
Static Drain-to-Source
On-State Resistance, R
0
--60
--40 --20 0 20 40 60 80 100 120 160140
I
= --2.0A, V
I
D
= --1.0A, V
D
I
= --10.0V
GS
= --4.0V
GS
= --1.0A, V
D
= --4.5V
GS
No.6995-2/4
IT02847
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