Ordering number : ENN6670
2SJ597
P-Channel Silicon MOSFET
2SJ597
DC / DC Converter Applications
Features
• Low ON-resistance.
• Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2083B
[2SJ597]
6.5
5.0
4
0.85
0.7
0.8
0.6
1
23
2.3 2.3
unit : mm
2092B
[2SJ597]
1.5
5.5
1.6
7.0
7.5
2.3
0.5
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
6.5
5.0
4
0.85
12
0.6
2.3 2.3
0.8
3
1.55.5
7.0
2.5
0.5
1.2
0 to 0.2
2.3
0.5
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2801
No.6670-1/4
2SJ597
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --16 A
Tc=25°C15W
Electrical Characteristics at Ta=25°C
--60 V
±20 V
--4 A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Sourse On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 270 pF
Output Capacitance Coss VDS=--20V, f=1MHz 70 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 28 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 9.8 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 1.7 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--2A, VGS=--10V 300 400 mΩ
RDS(on)2 ID=--1A, VGS=-4V 400 560 mΩ
r
f
SD
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--2A 2.3 3.2 S
See specified Test Circuit 11 ns
See specified Test Circuit 13 ns
IS=--4A, VGS=0 --0.92 --1.2 V
Ratings
min typ max
Switching Time Test Circuit
G
VDD= --30V
ID= --2A
RL=15Ω
D
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
V
IN
V
IN
Unit
--4.5
--4.0
--3.5
--3.0
-- A
D
--2.5
--2.0
--1.5
Drain Current, I
--1.0
--0.5
0
0
P.G
I
D
50Ω
-- V
DS
--10.0V
--5.0V
--0.4
--8.0V
--6.0V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source-V oltage, VDS -- V
S
V
2SJ597
--4.0V
--3.5V
--3.0V
= --2.5V
GS
IT02076
--8
VDS= --10V
--7
--6
-- A
--5
D
--4
--3
Drain Current, I
--2
--1
0
I
-- V
D
GS
Tc= --25°C
--2.0 --2.5 --4.0 --4.5 --5.0--1.0 --1.5 --3.0 --3.5
Gate-to-Source V oltage, VGS -- V
25°C
75°C
IT02077
No.6670-2/4
1000
900
800
--1A
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
RDS(on) -- V
ID= --2A
GS
Gate-to-Source V oltage, VGS -- V
Forward Transfer Admittance, yfs -- S
0.01
10
VDS= --10V
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
--0.001
Tc= --25°C
25°C
23 57
--0.01
yfs -- I
75°C
23 57
D
23 57 23 57
--0.1
Drain Current, ID -- A
Ciss, Coss, Crss -- V
Ciss
Coss
Crss
--10 --20
Ciss, Coss, Crss -- pF
1000
100
7
5
3
2
7
5
3
2
10
0
Drain-to-Source V oltage, VDS -- V
Switching Time, SW Time -- ns
100
1.0
SW Time -- I
7
5
3
2
10
7
5
3
2
--0.1
23 57 23 57
t
f
(on)
t
d
t
r
--1.0
t
d
D
(off)
Drain Current, ID -- A
Tc=25°C
--1.0
DS
f=1MHz
VDD= --30V
VGS= --10V
2SJ597
800
700
600
(on) -- mΩ
500
DS
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
--60 --40 --20 0 20 40 60 80 100 120 160140
IT02078 IT02079
--10
VGS= 0
7
5
3
2
-- A
--1.0
F
7
5
3
2
--0.1
7
Foward Current, I
5
3
2
--0.01
--10
IT02080
--60--30 --40 --50
IT01230
--10
IT02084
--0.4 --0.6 --0.8 --1.0 --1.2
--10
VDS= --10V
--9
ID= --4A
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1
0
0
--100
7
5
3
I
= --16A
2
DP
--10
-- A
7
D
I
= --4A
D
5
3
2
--1.0
Operation in this
7
Drain Current, I
area is limited by RDS(on).
5
3
2
Tc=25°C
Single pulse
--0.1
--1.0 --10
RDS(on) -- Tc
= --4V
GS
= --1A, V
I
D
I
D
= --2A, V
GS
= --10V
Case Temperature Tc -- °C
I
-- V
F
SD
°C
25°C
Tc=75°C
--25
Diode Forward V oltage, VSD -- V
VGS -- Qg
34 10987612
Drain Current, ID -- A
5
A S O
1ms
10ms
100ms
DC operation
Drain-to-Source V oltage, VDS -- V
100µs
23 5723 57
IT02081
IT02083
<10µs
IT02085
No.6670-3/4
--100
1.2
2SJ597
P
P
-- Ta
D
20
D
-- Tc
1.0
-- W
D
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
0
0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02086
-- W
D
15
10
Allowable Power Dissipation, P
0020 40 60580 100 120
Case Temperature, Tc -- °C
140 160
IT02087
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of August, 2000. Specifications and information herein are subject
to change without notice.
No.6670-4/4
PS
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