SANYO 2SJ597 Datasheet

Ordering number : ENN6670

2SJ597

P-Channel Silicon MOSFET

2SJ597

DC / DC Converter Applications

Features

• Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2083B

[2SJ597]

6.5

5.0

4

0.85

0.7

0.8

0.6

1

23

2.3 2.3

unit : mm

2092B

[2SJ597]

1.5

5.5

1.6

7.0

7.5

2.3

0.5

0.5

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

6.5

5.0

4

0.85

12

0.6

2.3 2.3

0.8

3

1.55.5

7.0

2.5

0.5

1.2

0 to 0.2

2.3

0.5

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

82200 TS IM TA-2801

No.6670-1/4

2SJ597

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --16 A

Tc=25°C15W

Electrical Characteristics at Ta=25°C

--60 V

±20 V

--4 A

1W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

Static Drain-to-Sourse On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 270 pF

Output Capacitance Coss VDS=--20V, f=1MHz 70 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit 8 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 28 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--4A 9.8 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--4A 1.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--4A 1.7 nC
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs





RDS(on)1 ID=--2A, VGS=--10V 300 400 mΩ
RDS(on)2 ID=--1A, VGS=-4V 400 560 mΩ

r

f

SD

=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--2A 2.3 3.2 S

See specified Test Circuit 11 ns

See specified Test Circuit 13 ns

IS=--4A, VGS=0 --0.92 --1.2 V

Ratings

min typ max

Switching Time Test Circuit

G

VDD= --30V

ID= --2A
RL=15Ω

D

V

OUT

0V

--10V

PW=10µs
D.C.≤1%

V

IN

V

IN

Unit

--4.5

--4.0

--3.5

--3.0

-- A
D

--2.5

--2.0

--1.5

Drain Current, I

--1.0

--0.5
0

0

P.G

I

D

50Ω

-- V

DS

--10.0V

--5.0V

--0.4

--8.0V

--6.0V

--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8

Drain-to-Source-V oltage, VDS -- V

S

V

2SJ597

--4.0V

--3.5V

--3.0V

= --2.5V

GS

IT02076

--8

VDS= --10V

--7

--6

-- A

--5

D

--4

--3

Drain Current, I

--2

--1

0

I

-- V

D

GS

Tc= --25°C

--2.0 --2.5 --4.0 --4.5 --5.0--1.0 --1.5 --3.0 --3.5

Gate-to-Source V oltage, VGS -- V

25°C

75°C

IT02077

No.6670-2/4