SANYO 2SJ596 Datasheet

Ordering number : ENN6979
Preliminary
2SJ596
P-Channel Silicon MOSFET
2SJ596
DC / DC Converter Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Package Dimensions
unit : mm
2083B
[2SJ596]
6.5
unit : mm
2092B
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
6.5
5.0
4
1.5
5.5
0.8
[2SJ596]
1.55.5
1.6
7.0
7.5
2.3
2.3
0.5
0.5
0.5
1.2
1 : Gate 2 : Drain 3 : Source 4 : Drain
SANYO : TP
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate 2 : Drain 3 : Source 4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
62501 TS IM TA-3119
No.6979-1/4
2SJ596
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage V Gate-to-Source Voltage V Drain Current (DC) I Drain Current (Pulse) I
Allowable Power Dissipation P Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS GSS
D
DP
D
PW10µs, duty cycle1% --32 A
Tc=25°C20W
Electrical Characteristics at Ta=25°C
--60 V
±20 V
--8 A
1W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V Zero-Gate Voltage Drain Current I Gate-to-Source Leakage Current I Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V Forward Transfer Admittance
Static Drain-to-Source On-State Resistance Input Capacitance Ciss VDS=--20V, f=1MHz 680 pF
Output Capacitance Coss VDS=--20V, f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 50 pF Turn-ON Delay Time td(on) See specified Test Circuit 10 ns Rise Time t Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns Fall Time t Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--8A 22 nC Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--8A 4 nC Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A 5 nC Diode Forward Voltage V
(BR)DSSID
DSS GSS
yfs
RDS(on)1 ID=--4A, VGS=--10V 110 145 m RDS(on)2 ID=--2A, VGS=--4V 155 220 m
r
f
SD
=--1mA, VGS=0 --60 V VDS=--60V, VGS=0 --10 µA VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--4A 5 7 S
See specified Test Circuit 30 ns
See specified Test Circuit 35 ns
IS=--8A, VGS=0 --0.9 --1.2 V
Ratings
min typ max
Marking : J596
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs D.C.1%
IN
V
IN
G
D
ID= --4A RL=7.5
V
OUT
Unit
P.G
50
2SJ596
S
No.6979-2/4
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