SANYO 2SJ596 Datasheet

Ordering number : ENN6979

Preliminary

2SJ596

P-Channel Silicon MOSFET

2SJ596

DC / DC Converter Applications

Features

•

Low ON-resistance.

• Ultrahigh-speed switching.

• 4V drive.

Package Dimensions

unit : mm

2083B

[2SJ596]

6.5

unit : mm

2092B

5.0

4

0.85

0.7

0.6

1

23

2.3 2.3

6.5

5.0

4

1.5

5.5

0.8

[2SJ596]

1.55.5

1.6

7.0

7.5

2.3

2.3

0.5

0.5

0.5

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP

7.0

2.5

0.5

1.2

0 to 0.2

1.2

1 : Gate
2 : Drain
3 : Source
4 : Drain

SANYO : TP-FA

0.85

12

0.6

2.3 2.3

3

0.8

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

62501 TS IM TA-3119

No.6979-1/4

2SJ596

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --32 A

Tc=25°C20W

Electrical Characteristics at Ta=25°C

--60 V

±20 V

--8 A

1W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance

Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 680 pF

Output Capacitance Coss VDS=--20V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 50 pF
Turn-ON Delay Time td(on) See specified Test Circuit 10 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 75 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--8A 22 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--8A 4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--8A 5 nC
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

yfs



RDS(on)1 ID=--4A, VGS=--10V 110 145 mΩ
RDS(on)2 ID=--2A, VGS=--4V 155 220 mΩ

r

f

SD

=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA

VDS=--10V, ID=--4A 5 7 S



See specified Test Circuit 30 ns

See specified Test Circuit 35 ns

IS=--8A, VGS=0 --0.9 --1.2 V

Ratings

min typ max

Marking : J596

Switching Time Test Circuit

VDD= --30V

V

0V

--10V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID= --4A
RL=7.5Ω

V

OUT

Unit

P.G

50Ω

2SJ596

S

No.6979-2/4