SANYO 2SJ590LS Datasheet
Ordering number : ENN7149
2SJ590LS
P-Channel Silicon MOSFET
2SJ590LS
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
4V drive.
Package Dimensions
unit : mm
2078C
[2SJ590LS]
10.0
16.1
3.6
123
0.9
0.75
3.2
3.5
1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --80 A
Tc=25°C25W
2.55
2.55
4.5
2.8
7.2
16.0
0.6
1.2
14.0
0.7
1 : Gate
2.4
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
--60 V
±20 V
--20 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--10A, VGS=--10V 43 56 mΩ
RDS(on)2 ID=--10A, VGS=--4V 62 87 mΩ
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V , VDS=0 ±10 µA
VDS=--10V, ID=--10A 13 18 S
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3295
No.7149-1/4
Unit
2SJ590LS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--20V, f=1MHz 1700 pF
Output Capacitance Coss VDS=--20V, f=1MHz 400 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 130 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 18 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 180 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--20A 53 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--20A 7 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--20A 13 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 80 ns
r
See specified Test Circuit. 90 ns
f
IS=--20A, VGS=0 --0.95 --1.2 V
min typ max
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --10A
RL=3Ω
V
OUT
Ratings
Unit
P.G
--20
--18
--16
--14
-- A
D
--12
--10
--8
--6
Drain Current, I
--4
--2
0
0 --0.6 --0.8 --1.4 --2.0--0.4 --1.2 --1.8--0.2 --1.0 --1.6
50Ω
--8.0V
--10.0V
ID -- V
--6.0V
DS
--5.0V
Drain-to-Source V oltage, V
120
100
RDS(on) -- V
S
--4.0V
DS
GS
2SJ590LS
--3.5V
--3.0V
VGS= --2.5V
IT04171
-- V
Tc=25°C
ID= --10A
--45
--40
--35
-- A
--30
D
--25
--20
--15
Drain Current, I
--10
--5
0
0 --0.5 --1.5--1.0 --2.5--2.0 --3.5--3.0 --4.5--4.0 --5.0
ID -- V
Gate-to-Source V oltage, V
120
100
RDS(on) -- Tc
GS
GS
VDS= --10V
Tc= --25°C
-- V
75°C
25°C
IT04172
80
(on) -- mΩ
DS
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --8--6 --10 --14--12 --16 --18 --20
Gate-to-Source V oltage, V
GS
-- V
IT04173
80
(on) -- mΩ
DS
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 200408060 100 120 140
= --10A, V
I
D
= --10A, V
I
D
GS
GS
= --4V
= --10V
Case Temperature, Tc -- °C
IT04174
No.7149-2/4
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