Sanyo 2SJ589LS Specifications
Ordering number : ENN7148
2SJ589LS
P-Channel Silicon MOSFET
2SJ589LS
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
4V drive.
Package Dimensions
unit : mm
2078C
[2SJ589LS]
10.0
16.1
3.6
123
0.9
0.75
3.2
3.5
1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --60 A
Tc=25°C25W
2.55
2.55
4.5
2.8
7.2
16.0
0.6
1.2
14.0
0.7
1 : Gate
2.4
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
--60 V
±20 V
--15 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--8A, VGS=--10V 58 80 mΩ
RDS(on)2 ID=--8A, VGS=--4V 80 115 mΩ
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--8A 10 14 S
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3294
No.7148-1/4
Unit
2SJ589LS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--20V, f=1MHz 1300 pF
Output Capacitance Coss VDS=--20V, f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 90 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 140 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--15A 40 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--15A 5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--15A 10 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 70 ns
r
See specified Test Circuit. 72 ns
f
IS=--15A, VGS=0 --0.91 --1.2 V
min typ max
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --8A
RL=3.75Ω
V
OUT
Ratings
Unit
P.G
--16
--14
--12
-- A
--10
D
--8
--6
Drain Current, I
--4
--2
0
0 --0.6 --0.8 --1.4 --2.0--0.4 --1.2 --1.8--0.2 --1.0 --1.6
50Ω
--8.0V
--10.0V
ID -- V
--6.0V
DS
--5.0V
Drain-to-Source V oltage, V
140
120
RDS(on) -- V
S
DS
GS
2SJ589LS
--4.0V
--3.5V
--3.0V
VGS= --2.5V
IT04147
-- V
Tc=25°C
ID= --8A
--30
VDS= --10V
--25
ID -- V
GS
Tc= --25°C
--20
-- A
D
--15
--10
Drain Current, I
°C
Tc=
°C
75
--25
25°C
-- V
GS
--5
0
0 --0.5 --1.5--1.0 --2.5--2.0 --3.5--3.0 --4.5--4.0 --5.0
Gate-to-Source V oltage, V
140
120
RDS(on) -- Tc
75°C
25°C
IT04148
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --8--6 --10 --14--12 --16 --18 --20
Gate-to-Source V oltage, V
GS
-- V
IT04149
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 200408060 100 120 140
= --8A, V
I
D
= --8A, V
I
D
GS
GS
= --4V
= --10V
Case Temperature, Tc -- °C
IT04150
No.7148-2/4
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