Ordering number : ENN7148
2SJ589LS
P-Channel Silicon MOSFET
2SJ589LS
DC / DC Converter Applications
Features
•
Low ON-resistance.
•
4V drive.
Package Dimensions
unit : mm
2078C
[2SJ589LS]
10.0
16.1
3.6
123
0.9
0.75
3.2
3.5
1.2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --60 A
Tc=25°C25W
2.55
2.55
4.5
2.8
7.2
16.0
0.6
1.2
14.0
0.7
1 : Gate
2.4
2 : Drain
3 : Source
SANYO : TO-220FI(LS)
--60 V
±20 V
--15 A
2.0 W
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--8A, VGS=--10V 58 80 mΩ
RDS(on)2 ID=--8A, VGS=--4V 80 115 mΩ
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--8A 10 14 S
min typ max
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11502 TS IM T A-3294
No.7148-1/4
Unit
2SJ589LS
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--20V, f=1MHz 1300 pF
Output Capacitance Coss VDS=--20V, f=1MHz 300 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 90 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 140 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--15A 40 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--15A 5 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--15A 10 nC
Diode Forward Voltage V
SD
See specified Test Circuit. 70 ns
r
See specified Test Circuit. 72 ns
f
IS=--15A, VGS=0 --0.91 --1.2 V
min typ max
Switching Time Test Circuit
VDD= --30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --8A
RL=3.75Ω
V
OUT
Ratings
Unit
P.G
--16
--14
--12
-- A
--10
D
--8
--6
Drain Current, I
--4
--2
0
0 --0.6 --0.8 --1.4 --2.0--0.4 --1.2 --1.8--0.2 --1.0 --1.6
50Ω
--8.0V
--10.0V
ID -- V
--6.0V
DS
--5.0V
Drain-to-Source V oltage, V
140
120
RDS(on) -- V
S
DS
GS
2SJ589LS
--4.0V
--3.5V
--3.0V
VGS= --2.5V
IT04147
-- V
Tc=25°C
ID= --8A
--30
VDS= --10V
--25
ID -- V
GS
Tc= --25°C
--20
-- A
D
--15
--10
Drain Current, I
°C
Tc=
°C
75
--25
25°C
-- V
GS
--5
0
0 --0.5 --1.5--1.0 --2.5--2.0 --3.5--3.0 --4.5--4.0 --5.0
Gate-to-Source V oltage, V
140
120
RDS(on) -- Tc
75°C
25°C
IT04148
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --8--6 --10 --14--12 --16 --18 --20
Gate-to-Source V oltage, V
GS
-- V
IT04149
100
(on) -- mΩ
DS
80
60
40
20
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 200408060 100 120 140
= --8A, V
I
D
= --8A, V
I
D
GS
GS
= --4V
= --10V
Case Temperature, Tc -- °C
IT04150
No.7148-2/4
2SJ589LS
100
7
5
3
2
fs -- S
10
y
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
2
Forward Transfer Admittance,
0.01
5
3
2
100
7
5
3
2
Switching Time, SW Time -- ns
10
--0.1
--10
--9
--8
-- V
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1
0
0
2.5
23 75
--0.01--0.001
23 57
VDS= --10V
ID= --15A
yfs -- I
D
Tc= --25
75
23 75
23 75
--0.1
Drain Current, I
SW Time -- I
t
(off)
d
t
f
t
r
t
(on)
d
23 2357
--1.0
Drain Current, I
--1.0
D
D
23 75
-- A
D
-- A
VGS -- Qg
Total Gate Charge, Qg -- nC
P
-- Ta
D
VDS= --10V
°C
°C
25°C
23 75
--10
VDD= --30V
VGS= --10V
--10
IT04151
IT04153
IT04155
--100
4020 305253510 15
--100
7
5
3
2
--10
7
-- A
5
F
3
2
--1.0
7
5
3
2
--0.1
Forward Current, I
7
5
3
2
--0.01
--0.2 --0.4 --0.6 --0.8 --1.0 --1.2
IF -- V
Tc=75°C
Diode Forward V oltage, V
10000
7
5
3
2
1000
7
5
3
2
100
7
Ciss, Coss, Crss -- pF
5
3
2
10
0 --10 --20 --30 --40 --50 --60
Ciss, Coss, Crss -- V
Drain-to-Source V oltage, V
--100
IDP= --60A
7
5
3
2
ID= --15A
--10
-- A
7
D
5
3
2
--1.0
7
Drain Current, I
5
3
2
--0.1
Operation in this area
is limited by RDS(on).
Tc=25°C
Single pulse
23 57 23 57 23 57
Drain-to-Source V oltage, V
30
25°C
Coss
A S O
P
D
SD
--25°C
Ciss
Crss
DC operation
-- Tc
SD
DS
10ms
100ms
--10 --100--1.0--0.1
DS
-- V
DS
-- V
1ms
-- V
100µs
VGS=0
IT04152
f=1MHz
IT04154
≤10µs
IT04156
-- W
2.0
D
1.5
1.0
0.5
No heat sink
Allowable Power Dissipation, P
00
00 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04157
25
-- W
D
20
15
10
5
Allowable Power Dissipation, P
00
00 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT04158
No.7148-3/4
2SJ589LS
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of January, 2002. Specifications and information herein are subject
to change without notice.
No.7148-4/4
PS
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