SANYO 2SJ584LS Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6410

2SJ584LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

retemaraPlobmySsnoitidnoCsgnitaRtinU

egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25°C

Package Dimensions

unit:mm

2078B

[2SJ584LS]

10.0

3.2

16.1

3.6

123

0.9

1.2

0.75

3.5

7.2

2.4

2.552.55

4.5

2.8

16.0

0.6

14.0

0.7

1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS

052–V
03±V

5.4–A
81–A

0.2W
52W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

SSD
SSG

SG

SD

I

SSD)RB(

D

I

SSG)RB(

G

V

SD

V

SG

)ffo(VSDI,V01–=

)no(IDV,A5.2–=

V,Am1–=

0=052–V

SG

V,Aµ001±=

0=03±V

SD

V,V052–=

0=001–Aµ

SG

V,V52±=

0=01±Aµ

SD

Am1–=5.3–0.5–V

D

A5.2–=5.15.2S

D

V01–=59.02.1

SG

80300TS (KOTO) TA-2755 No.6410–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

Ω

2SJ584LS

Continued from preceding page.

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ecnaticapaCtupnIssiCV

ecnaticapaCtuptuOssoCV

ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V001–=

egrahCecruoS-ot-etaGsgQVSDV,V001–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V001–=

egatloVdrawroFedoiDV

r

d

f

DS

SD
SD
SD

)no(d

)ffo(tiucriCtseTdeificepseeS25sn

I

S

Marking : J584

Switching Time Test Circuit

VDD= --100V

V

0V

--10V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID= --2.5A

RL=40Ω

V

OUT

zHM1=f,V02–=054Fp
zHM1=f,V02–=021Fp
zHM1=f,V02–=05Fp

tiucriCtseTdeificepseeS5.21sn
tiucriCtseTdeificepseeS03sn

tiucriCtseTdeificepseeS12sn

SG
SG
SG

V,A5.4–=

0=9.0–5.1–V

SG

nimpytxam

I,V01–=

A5.4–=22Cn

D

I,V01–=

A5.4–=7.3Cn

D

I,V01–=

A5.4–=11Cn

D

sgnitaR

tinU

--5.0

--4.5

--4.0

--3.5

–A

--3.0

D

--2.5

--2.0

--1.5

Drain Current, I

--1.0

--0.5

2.0

1.8

– Ω

1.6

(on)

DS

1.4

P.G

0

0

--2

Drain-to-Source Voltage, VDS–V

50Ω

I

D

-- V

2SJ584LS

S

DS

--9V

--8V

= --10V

GS

V

--4 --6 --8 --10--1 --3 --5 --7 --9

RDS(on) -- V

GS

--7V

--6V

--5V

IT01497

Tc=25°C
ID= --2.5A

I

-- V

--9

VDS= --10V

--8

--7

--6

–A

D

--5

--4

--3

Drain Current, I

--2

--1

0

0 --2 --4 --6 --8 --10--1 --3 --5 --7 --9

D

GS

Gate-to-Source Voltage, VGS–V

RDS(on) -- Tc

– Ω

(on)

DS

2.5

2.0

1.5

°C

25°C

Tc= --25

VGS= --10V
ID= --2.5A

75°C

IT01498

1.2

1.0

0.8

Static Drain-to-Source

On-State Resistance, R

0.6

--6 --8 --10 --12

Gate-to-Source Voltage, VGS–V

--14 --16 --18 --20

IT01499

1.0

0.5

Static Drain-to-Source

On-State Resistance, R

0

--50

--25 0 25 50 75 100 125 150

Case Temperature, Tc – ˚C

IT01500

No.6410–2/4