SANYO 2SJ583LS Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6409

2SJ583LS

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON-resistance.

· Ultrahigh-speed switching.

· Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-niarDV

egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25°C

Package Dimensions

unit:mm

2078B

[2SJ583LS]

10.0

3.2

16.1

3.6

123

0.9

1.2

0.75

3.5

7.2

2.4

2.552.55

4.5

2.8

16.0

0.6

14.0

0.7

1 : Gate
2 : Drain
3 : Source
SANYO : TO-220FI-LS

052–V
03±V

5.3–A
41–A

0.2W
02W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

SSD
SSG

SG

SD

I

SSD)RB(

D

I

SSG)RB(

G

V

SD

V

SG

)ffo(VSDI,V01–=

)no(IDV,A2–=

V,Am1–=

0=052–V

SG

V,Aµ001±=

0=03±V

SD

V,V052–=

0=001–Aµ

SG

V,V52±=

0=01±Aµ

SD

Am1–=5.3–0.5–V

D

A2–=2.10.2S

D

V01–=2.15.1

SG

80300TS (KOTO) TA-2754 No.6409–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

Ω

2SJ583LS

Continued from preceding page.

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ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egrahCetaGlatoTgQVSDV,V001–=

egrahCecruoS-ot-etaGsgQVSDV,V001–=

egrahC"relliM"niarD-ot-etaGdgQVSDV,V001–=

egatloVdrawroFedoiDV

r

d

f

DS

SD
SD
SD

)no(d

)ffo(tiucriCtseTdeificepseeS54sn

I

S

Marking : J583

Switching Time Test Circuit

VDD= --100V

V

0V

--10V

IN

ID= --2A

RL=50Ω

zHM1=f,V02–=063Fp
zHM1=f,V02–=59Fp
zHM1=f,V02–=04Fp

tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS12sn

tiucriCtseTdeificepseeS5.61sn

SG
SG
SG

V,A5.3–=

0=9.0–5.1–V

SG

nimpytxam

I,V01–=

A5.3–=81Cn

D

I,V01–=

A5.3–=3Cn

D

I,V01–=

A5.3–=9Cn

D

sgnitaR

tinU

--5.0

--4.5

--4.0

--3.5

–A

D

--3.0

--2.5

--2.0

--1.5

Drain Current, I

--1.0

--0.5

2.0

1.8

– Ω

1.6

(on)

DS

1.4

1.2

1.0

0

0

V

IN

PW=10µs
D.C.≤1%

P.G

G

50Ω

I

D

-- V

= --10V

GS

V

--2

--4 --6 --8 --10--1 -- 3 --5 --7 --9

Drain-to-Source Voltage, VDS–V

RDS(on) -- V

D

DS

2SJ583LS

S

--8V

GS

V

OUT

--9V

--7V

--6V

--5V

Tc=25°C
ID= --2A

IT01485

--7

VDS= --10V

--6

--5

D

GS

I

-- V

–A

D

--4

--3

--2

Drain Current, I

--1

0

0 --2 --4 --6 --8 --10--1 --3 --5 --7 --9

3.0

2.5

Gate-to-Source Voltage, V

RDS(on) -- Tc

GS

– Ω

2.0

(on)

DS

1.5

1.0

°C

Tc= --25

–V

25°C

75°C

IT01486

0.8

Static Drain-to-Source

On-State Resistance, R

0.6

--6 --8 --10 --12

Gate-to-Source Voltage, VGS–V

--14 --16 --18 --20

IT01487

0.5

Static Drain-to-Source

On-State Resistance, R

0

--25 0 25 50 75 100 125 150

--50

Case Temperature, Tc – ˚C

IT01488

No.6409–2/4