SANYO 2SJ580 Datasheet
Ordering number : ENN6669
2SJ580
P-Channel Silicon MOSFET
2SJ580
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistanse.
•
Ultrahigh-speed switching.
• 4V drive.
Package Dimensions
unit : mm
2062A
[2SJ580]
0.5
2
1
0.4
3
4.5
1.6
1.5
3.0
0.75
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
Specifications
(Bottom view)
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --7.2 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W
2
✕0.8mm) 1.5 W
--60 V
±20 V
--1.8 A
Electrical Characteristics at T a=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.4 V
Forward Transfer Admittance
Static Drain-to-Sourse On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--1A, VGS=--10V 300 400 mΩ
RDS(on)2 ID=--0.8A, VGS=-4V 400 560 mΩ
=--1mA, VGS=0 --60 V
VDS=--60V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--1A 1.6 2.3 S
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
min typ max
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-2733
No.6669-1/4
Unit
2SJ580
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--20V, f=1MHz 270 pF
Output Capacitance Coss VDS=--20V, f=1MHz 70 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 20 pF
Turn-ON Delay Time td(on) See specified Test Circuit 9 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 38 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--1.8A 9.8 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--1.8A 1.4 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--1.8A 1.7 nC
Diode Forward Voltage V
SD
See specified Test Circuit 7 ns
r
See specified Test Circuit 16 ns
f
IS=--1.8A, VGS=0 --0.81 --1.2 V
Marking : JR
Switching Time Test Circuit
VDD= --30V
ID= --1A
RL=30Ω
D
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
V
IN
V
IN
G
Ratings
min typ max
Unit
P.G
--2.0
--1.8
--1.6
--1.4
-- A
D
--1.2
--1.0
--0.8
--0.6
Drain Current, I
--0.4
--0.2
--8.0V
--6.0V
--10.0V
0
0
--0.4
Drain-to-Source V oltage, VDS -- V
1000
900
800
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
0 --2 --4 --6 --8 --10 --12
--1.0A
I
D
= --0.8A
Gate-to-Source V oltage, VGS -- V
50Ω
I
-- V
D
DS
--5.0V
--4.0V
--3.5V
--3.0V
VGS= --2.5V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--14 --16 --18 --20
2SJ580
S
IT01223
Tc=25°C
IT02042
I
-- V
--4.0
VDS= --10V
--3.5
--3.0
-- A
--2.5
D
--2.0
--1.5
Drain Current, I
--1.0
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
D
GS
Gate-to-Source V oltage, VGS -- V
1000
900
800
700
(on) -- mΩ
DS
600
500
400
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
--40 --20 0 20 40 60 80 100 120 160140
--60
RDS(on) -- Tc
= --4V
GS
= --0.8A, V
I
D
= --1.0A, V
I
D
GS
= --10V
Case Temperature Tc -- °C
°C
Tc= --25
25°C
75°C
IT02041
IT02043
No.6669-2/4
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