SANYO 2SJ579 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6384
2SJ579
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2062A
[2SJ579]
1.6
0.4
0.5
2
3
1.5
0.75
2
× )mm8.05.1W
mm052(draobcimarecanodetnuoM
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
06–V
02±V
2.1–A
8.4–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=06–V
SG
V,V06–=
SD
SG
SD
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–4.2–V
D
A6.0–=9.02.1S
D
V,A6.0–=
V01–=026008mΩ
SG
V,Am4.0–=
V4–=0080511mΩ
SG
nimpytxam
Marking : JQ Continued on next page.
31000TS (KOTO) TA-2315 No.6384–1/4
sgnitaR
tinU
2SJ579
5
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=--30V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID=--0.6A
RL=50Ω
V
OUT
zHM1=f,V02–=031Fp
zHM1=f,V02–=53Fp
zHM1=f,V02–=9Fp
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS7sn
tiucriCtseTdeificepseeS22sn
tiucriCtseTdeificepseeS8sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,A2.1–=
0=28.0–2.1–V
SG
nimpytxam
A2.1–=5Cn
D
A2.1–=8.0Cn
D
A2.1–=9.0Cn
D
sgnitaR
tinU
--1.4
--1.2
--1.0
–A
D
--0.8
--0.6
--0.4
Drain Current, I
--0.2
1400
1200
–mΩ
1000
DS(on)
800
600
P.G
0
0
ID=--0.4A
50Ω
I
D
-- V
2SJ579
S
DS
--5.0V
--8.0V
--4.0V
--3.5V
--6.0V
--10.0V
--0.4
Drain-to-Source Voltage, VDS–V
--0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
RDS(on) -- V
GS
--0.6A
--3.0V
VGS=--2.5V
IT01167
Tc=25°C
--2.5
VDS=--10V
--2.0
D
GS
I
-- V
–A
D
--1.5
--1.0
Drain Current, I
--0.5
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --4.0--3.5 --4.
1400
1200
–mΩ
1000
DS(on)
800
600
Gate-to-Source Voltage, VGS–V
RDS(on) -- Tc
=- -4V
GS
=- -0.4A, V
I
D
=- -0.6A, V
I
D
GS
=- -10V
Tc=--25
°C
75
°C
25°C
IT01168
400
200
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12
Gate-to-Source Voltage, V
--14 --16 --18 --20
–V
GS
IT01169
400
200
Static Drain-to-Source
On-State Resistance, R
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Case Temperature, Tc – ˚C
IT01170
No.6384–2/4
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