SANYO 2SJ578 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6408
2SJ578
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2062A
[2SJ578]
1.6
0.4
0.5
2
3
1.5
0.75
2
× )mm8.03.1W
mm052(draobcimarecanodetnuoM
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
06–V
02±V
1–A
4–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=06–V
SG
V,V06–=
SD
SG
SD
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–4.2–V
D
A5.0–=6.09.0S
D
V,A5.0–=
V,A3.0–=
V01–=0890031mΩ
SG
V4–=00310081mΩ
SG
31000TS (KOTO) TA-2314 No.6408–1/4
sgnitaR
nimpytxam
Continued on next page.
tinU
2SJ578
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A1–=
S
Marking : JP
zHM1=f,V02–=57Fp
zHM1=f,V02–=22Fp
zHM1=f,V02–=7Fp
tiucriCtseTdeificepseeS6sn
tiucriCtseTdeificepseeS4sn
tiucriCtseTdeificepseeS12sn
tiucriCtseTdeificepseeS41sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=68.0–2.1–V
SG
sgnitaR
nimpytxam
A1–=7.3Cn
D
A1–=6.0Cn
D
A1–=5.0Cn
D
tinU
Switching Time Test Circuit
V
IN
0V
--10V
V
IN
PW=10µs
--1 .0
--0 .8
–A
--0 .6
D
--0 .4
Drain Current, I
--0 .2
2500
D.C.≤1%
P.G
0
0
G
50Ω
I
D
--8.0V
--6.0V
--10.0V
--0.4 --0.8 --1.2 --1.6 --2.0--0.2 --0.6 --1.0 --1.4 --1.8
Drain-to-Source Voltage, VDS–V
RDS(on) -- V
VDD=--30V
D
-- V
--4.0V
S
DS
--3.5V
ID=--0.5A
RL=60Ω
V
OUT
2SJ578
--5.0V
--3.0V
GS
V
GS
=--2.5V
IT01155
Tc=25°C
I
-- V
--2 .0
VDS=--10V
--1 .8
--1 .6
--1 .4
–A
--1 .2
D
--1 .0
--0 .8
--0 .6
Drain Current, I
--0 .4
--0 .2
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.5--4.0
2500
Gate-to-Source Voltage, V
D
RDS(on) -- Tc
GS
GS
Tc=--25°C
–V
25°C
75°C
IT01156
2000
–mΩ
(on)
1500
DS
--0.5A
ID=--0.3A
1000
500
Static Drain-to-Source
On-State Resistance, R
0
0 --2 --4 --6 --8 --10 --12
Gate-to-Source Voltage, VGS–V
--14 --16 --18 --20
IT01157
2000
–mΩ
(on)
1500
DS
1000
500
Static Drain-to-Source
On-State Resistance, R
0
--60
--40 --20 0 20 40 60 80 100 120 140 160
=- -4V
GS
=- -0.3A, V
I
D
I
=- -0.5A, V
D
GS
=- -10V
Case Temperature, Tc – ˚C
IT01158
No.6408–2/4
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