SANYO 2SJ569LS Datasheet

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Ordering number : ENN6898

2SJ569LS

P-Channel Silicon MOSFET

2SJ569LS

Ultrahigh-Speed Switching Applications

Features

• Low ON-resistance.

•

Ultrahigh-speed switching.

Package Dimensions

unit : mm

2078B

[2SJ569]

7.2

16.0

14.0

4.5

0.7

1 : Gate
2 : Drain

2.8

0.6

3.2

16.1

3.6

10.0

123

0.9

1.2

0.75

3.5

3 : Source

2.4

Specifications

2.552.55

SANYO : TO-220FI-LS

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

PW≤10µs, duty cycle≤1% --20 A

Tc=25°C30W

--300 V
±30 V

--5 A

2.0 W

Electrical Characteristics at T a=25 °C

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Gate-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.5 --2.5 V

(BR)DSSID
(BR)GSSIG

DSS
GSS

=--1mA, VGS=0 --300 V

=±100µA, VDS=0 ±30 V
VDS=--300V, VGS=0 --100 µA
VGS=±25V, VDS=0 ±10 µA

min typ max

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

Ratings

Continued on next page.

22201 TS IM TA-2231

No.6898-1/4

Unit

2SJ569LS

Continued from preceding page.

Parameter Symbol Conditions

Forward Transfer Admittance | yfs | VDS=--10V, ID=--3A 3 5 S
Static Drain-to-Sourse On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 750 pF
Output Capacitance Coss VDS=--20V, f=1MHz 170 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 76 pF
Turn-ON Delay Time td(on) See specified Test Circuit 24 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 230 ns
Fall Time t
Diode Forward Voltage V

RDS(on) ID=--3A, VGS=--10V 0.95 1.25 Ω

See specified Test Circui 37 ns

r

See specified Test Circuit 110 ns

f

SD

IS=--5A, VGS=0 --1.0 --1.5 V

min typ max

Switching Time Test Circuit

VDD= --100V

ID= --3A
RL=33.3Ω

0V

--10V

V

IN

Ratings

Unit

PW=10µs
D.C.≤1%

P.G

--5.0

--4.5

--8.0V

--4.0

--3.5

--3.0

--2.5

--2.0

--1.5

--1.0

--0.5

--10.0V

0

0

-- A
D

Drain Current, I

--6.0V

--6

V

IN

G

50Ω

I

D

--4.0V

--12 --18 --24 --30--3 --9 --15 --21 --27

-- V

D

S

DS

Drain-to-Source V oltage, VDS -- V

--2.0

--1.8

--1.6

--1.4

(on) -- Ω

DS

--1.2

--1.0

--0.8

--0.6

--0.4

Static Drain-to-Source

On-State Resistance, R

--0.2
0

0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20

RDS(on) -- V

GS

Gate-to-Source V oltage, VGS -- V

V

OUT

2SJ569LS

--3.5V

--3.0V

= --2.5V

V

GS

Tc=25°C
ID= --3A

I

-- V

--8

VDS= --10V

--7

--6

-- A

--5

D

--4

--3

Drain Current, I

--2

--1

0

0 --2 --4 --6--1 --3 --5

IT01834

2.0

ID= --3A

1.8

VGS= --10V

1.6

1.4

(on) -- Ω

DS

1.2

1.0

0.8

0.6

0.4

Static Drain-to-Source

On-State Resistance, R

0.2
0

--60 --40 --20 0 20 40 60 80 100 120 160140

IT01836 IT01837

Gate-to-Source V oltage, VGS -- V

D

Tc=75°C

RDS(on) -- Tc

Case Temperature, Tc -- °C

--25

GS

25°C

Tc= --25°C

25°C

°C

75°C

IT01835

No.6898-2/4