SANYO 2SJ562 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6096A
2SJ562
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
4.5
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2062A
[2SJ562]
1.6
0.4
0.5
2
3
1.5
0.75
2
× )mm8.05.1W
mm052(draobcimarecanodetnuoM
1
3.0
1.5
2.5
4.25max
1.0
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : PCP
(Bottom view)
02–V
01±V
2–A
8–A
5.3W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)ffo(SG
1IDV,A1–=
)no(SD
2I
)no(SD
I
SSD)RB(
D
V
V
V
D
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
Am1–=4.0–4.1–V
D
A1–=8.16.2S
D
V4–=542513mΩ
SG
V,Am002–=
V5.2–=043084mΩ
SG
nimpytxam
Marking : JN Continued on next page.
71000TS (KOTO) TA-1695 No.6096–1/4
sgnitaR
tinU
2SJ562
VDD=—10V
Continued from preceding page.
retemaraPlobmySsnoitidnoC
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
V,A2–=
S
Switching Time Test Circuit
V
IN
0V
—4V
PW=10µs
D.C.≤1%
V
IN
G
ID=—1A
RL=10Ω
D
V
OUT
zHM1=f,V01–=081Fp
zHM1=f,V01–=09Fp
zHM1=f,V01–=34Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS82sn
tiucriCtseTdeificepseeS23sn
tiucriCtseTdeificepseeS23sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
A2–=5.9Cn
D
A2–=1Cn
D
A2–=5.1Cn
D
tinU
P.G
-
2.0
-
1.8
-
1.6
-
1.4
–A
D
-
1.2
-
1.0
-
0.8
-
0.6
Drain Current, I
-
0.4
-
0.2
0
0
10
7
5
fs|–S
y
3
2
1.0
7
5
3
2
Forward Transfer Admittance, |
0.1
-
0.01
2SJ562
50Ω
ID-
-10.0V
-4.0V
S
V
DS
-3.0V
-2.5V
-2.0V
-8.0V
-6.0V
-
0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
D
VGS=-1.5V
VDS=-10V
°C
Tc=-25
25
°C
75°C
23 57 23 57 23 57
-
0.1
Drain Current, ID–A
-
1.0
-
4.0
VDS=-10V
-
3.6
-
3.2
-
2.8
–A
D
-
2.4
-
2.0
-
1.6
-
1.2
Drain Current, I
-
0.8
-
0.4
0
-
0.4-0.8-1.2
0
1000
900
800
–mΩ
700
600
DS(on)
500
400
ID=-0.2A
300
200
Static Drain-to-Source
On-State Resistance, R
100
0
Gate-to-Source Voltage, VGS–V
ID=-1.0A
-2-3-4-5-6-7-8-9-
-
10
Gate-to-Source Voltage, VGS–V
ID-
R
DS(on)
V
GS
°C
°C
25
Tc=-25
°C
75
-
2.0
-
1.6
-
-
2.4-2.8
V
GS
Tc=25
°C
-
3.2
10
No.6096–2/4
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