SANYO 2SJ522 Datasheet

Ordering number : ENN7127

2SJ522

P-Channel Silicon MOSFET

2SJ522

Ultrahigh-Speed Switching Applications

Features

•

Low ON-resistance.

Package Dimensions

unit : mm

2093A

[2SJ522]

10.2

0.9

11.5

unit : mm

2090A

20.9

9.4

0.8

1.6

0.8

123

2.55

1.2

2.55

[2SJ522]

10.2

11.0 8.8

2.7

4.5

1.3

0.4

1 : Gate
2 : Drain
3 : Source

SANYO : SMP

4.5

1.3

9.93.0

123

0.8

2.55

1.2

2.55

2.552.55

8.8

1.5max

1.35

1 : Gate
2 : Drain
3 : Source

2.7

SANYO : SMP-FD

1.4

0 to 0.3

0.4

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

80902 TS IM TA-100038

No.7127-1/4

2SJ522

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I

Allowable Power Dissipation P
Channel T emperature T ch 150 °C

Storage T emperature Tstg --55 to +150 °C

DSS
GSS

D

DP

D

Tc=25°C70W

Electrical Characteristics at Ta=25°C

--400 V
±30 V

--5 A

--20 A

1.65 W

Parameter Symbol Conditions

Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --2.0 --3.0 V
Forward Transfer Admittance yfs
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 1500 pF
Output Capacitance Coss VDS=--20V, f=1MHz 240 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 90 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 25 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 340 ns
Fall Time t
Diode Forward Voltage V

(BR)DSSID

DSS
GSS

RDS(on) ID=--2.5A, VGS=--10V 1.5 2.0 Ω

r

f

SD

=--10mA, VGS=0 --400 V
VDS=--320V, VGS=0 --1.0 mA
VGS=±30V, VDS=0 ±100 nA

VDS=--10V, ID=--2.5A 1.3 2.6 S



See specified Test Circuit. 70 ns

See specified Test Circuit. 150 ns
IS=--5A, VGS=0 --1.5 V

min typ max

Ratings

Marking : J522
*(Note) Be careful in handling the 2SJ522 because it has no protection diode between gate and source.

Switching Time Test Circuit

VDD= --200V

V

0V

--10V

PW=10µs
D.C.≤1%

IN

V

IN

G

D

ID= --2.5A
RL=80Ω

V

OUT

Unit

P.G

50Ω

2SJ522

S

No.7127-2/4