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Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Load Switching Applications
Ordering number:ENN6435
2SJ520
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· 2.5V drive.
Package Dimensions
unit:mm
2083B
[2SJ520]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
2.3
1.5
7.0
5.5
1.6
1.2
7.5
0.5
unit:mm
2092B
6.5
5.0
[2SJ520]
1.55.5
2.3
0.5
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
31000TS (KOTO) TA-2505 No.6435–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
![](/html/ba/baf5/baf58f38257070bfcdc7101a10308f9c04fbf8fc11549df1a61ec5a3657d691c/bg2.png)
2SJ520
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
Marking : J520
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25˚C
I
SSD)RB(
D
V
SSD
V
SSG
)ffo(VSDI,V01–=
SG
R
1)no(IDV,A5–=
SD
R
2)no(IDV,A1–=
SD
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
SD
SD
V,A5–=
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
Am1–=4.0–3.1–V
D
A5–=821S
D
V4–=8426mΩ
SG
V5.2–=07001mΩ
SG
zHM1=f,V01–=059Fp
zHM1=f,V01–=035Fp
zHM1=f,V01–=061Fp
tiucriCtseTdeificepseeS02sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS032sn
tiucriCtseTdeificepseeS032sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
A5–=03Cn
D
A5–=5Cn
D
A5–=7Cn
D
02–V
01±V
01–A
04–A
1W
02W
˚C
˚C
tinU
Switching Time Test Circuit
VDD=--10V
V
IN
0V
--4V
V
IN
PW=10µs
D.C.≤1%
P.G
G
50Ω
ID=--5A
RL=2Ω
V
D
OUT
2SJ520
S
No.6435–2/4