SANYO 2SJ503 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
DC/DC Converter Applications
Ordering number:ENN5932
2SJ503
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· 4V drive.
Package Dimensions
unit:mm
2083B
[2SJ503]
6.5
5.0
4
0.85
0.7
0.6
1
23
2.3 2.3
0.8
2.3
1.5
7.0
5.5
1.6
1.2
7.5
0.5
unit:mm
2092B
6.5
5.0
[2SJ503]
1.55.5
2.3
0.5
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
7.0
0.85
1243
0.6
2.3 2.3
0.8
0.5
2.5
1.2
0 to 0.2
31000TS (KOTO) TA-2512 No.5932–1/4
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
2SJ503
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25˚C
I
SSD)RB(
D
V
SSD
V
SSG
)ffo(VSDI,V01–=
SG
R
1)no(IDV,A4–=
SD
R
2)no(IDV,A2–=
SD
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
SD
SD
V,A4–=
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–5.2–V
D
A4–=46S
D
V01–=5658mΩ
SG
V4–=031081mΩ
SG
zHM1=f,V01–=074Fp
zHM1=f,V01–=082Fp
zHM1=f,V01–=041Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS53sn
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS54sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
A4–=51Cn
D
A4–=3Cn
D
A4–=4Cn
D
03–V
02±V
4–A
61–A
0.1W
02W
˚C
˚C
tinU
Switching Time Test Circuit
VDD=—15V
V
IN
0V
—10V
PW=10µs
D.C.≤1%
P.G
V
IN
G
50Ω
D
ID=—4A
RL=3.75Ω
S
V
OUT
2SJ503
No.5932–2/4
Loading...