SANYO 2SJ502 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6178A
2SJ502
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.4
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Package Dimensions
unit:mm
2091A
[2SJ502]
3
1
0.95
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
0 to 0.1
1 : Gate
1.1
2 : Source
3 : Drain
SANYO : CP
03–V
02±V
5.0–A
0.2–A
52.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=03–V
SG
V,V03–=
SD
SG
SD
0=01–Aµ
SG
V,V61±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–5.2–V
D
D
V,Am003–=
V,Am003–=
Am003–=003008Sm
V01–=063006mΩ
SG
V4–=096079mΩ
SG
nimpytxam
Marking : FM Continued on next page.
81000TS (KOTO) TA-2363 No.6178–1/4
sgnitaR
tinU
2SJ502
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=—15V
ID=—300mA
RL=50Ω
D
V
OUT
0V
—10V
V
IN
PW=10µs
D.C.≤1%
V
IN
G
zHM1=f,V01–=09Fp
zHM1=f,V01–=05Fp
zHM1=f,V01–=02Fp
tiucriCtseTdeificepseeS8sn
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS04sn
tiucriCtseTdeificepseeS52sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,Am005–=
0=39.0–5.1–V
SG
sgnitaR
nimpytxam
D
D
D
Am005–=4Cn
Am005–=1Cn
Am005–=1Cn
tinU
-
0.6
-
0.5
-
0.4
–A
D
-
0.3
-
0.2
P.G
-
8.0V
10V
-
-
50Ω
6.0V
-
4.0V
ID-
-
V
3.5V
2SJ502
S
DS
Drain Current, I
-
0.1
0
0-0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0
V
GS
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
I
D
VDS=-10V
°C
25
-
Ta=
75°C
23 5723 57 23
-
1.0
y
fs|–S
Forward Transfer Admittance, |
0.01
1.0
0.1
10
7
5
3
2
7
5
3
2
7
5
3
2
-
0.01
-
0.1
Drain Current, ID–A
-
=
25°C
-
2.5V
3.0V
-
2.0
VDS=-10V
-
1.8
-
1.6
-
1.4
–A
D
-
1.2
-
1.0
-
0.8
-
0.6
Drain Current, I
-
0.4
-
0.2
0
0
1000
900
800
–mΩ
700
600
DS(on)
500
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
-
-
0.5
ID=-0.3A
-20-4-6-8-10-12-14-16-18-
Gate-to-Source Voltage, VGS–V
ID-
V
GS
1.0
-
2.0
-
1.5
-
3.0
-
-
2.5
3.5
Gate-to-Source Voltage, VGS–V
R
DS(on)
-
V
GS
25°C
-
25°C
Ta=
75°C
-
4.0-4.5
Ta=25°C
20
No.6178–2/4
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