SANYO 2SJ501 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN5948A
2SJ501
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
0.4
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 2.5V drive.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Package Dimensions
unit:mm
2091A
[2SJ501]
3
1
0.95
0.95
1.9
2.9
0.5
1.5
2
0.5
0.8
0.16
2.5
0 to 0.1
1 : Gate
1.1
2 : Source
3 : Drain
SANYO : CP
02–V
01±V
5.0–A
0.2–A
52.0W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
)no(SD
)no(SD
I
SSD)RB(
D
V
V
V
)ffo(SG
1I
D
2I
D
V,Am1–=
0=02–V
SG
V,V02–=
SD
SG
SD
0=01–Aµ
SG
V,V8±=
0=01±Aµ
SD
I,V01–=
Am1–=5.0–5.1–V
D
D
V,Am003–=
V,Am05–=
Am003–=2.00.1S
V4–=024006mΩ
SG
V5.2–=0360001mΩ
SG
nimpytxam
Marking : EM Continued on next page.
71000TS (KOTO) TA-2922 No.5948–1/4
sgnitaR
tinU
2SJ501
Continued from preceding page.
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ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egrahCetaGlatoTgQVSDV,V01–=
egrahCecruoS-ot-etaGsgQVSDV,V01–=
egrahC"relliM"niarD-ot-etaGdgQVSDV,V01–=
egatloVdrawroFedoiDV
r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=–10V
D
ID=–300mA
RL=33Ω
V
OUT
0V
–4V
PW=10µs
D.C.≤1%
V
IN
V
IN
G
zHM1=f,V01–=001Fp
zHM1=f,V01–=06Fp
zHM1=f,V01–=52Fp
tiucriCtseTdeificepseeS01sn
tiucriCtseTdeificepseeS71sn
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS53sn
I,V01–=
SG
I,V01–=
SG
I,V01–=
SG
V,Am005–=
0=78.0–5.1–V
SG
sgnitaR
nimpytxam
D
D
D
Am005–=5Cn
Am005–=1Cn
Am005–=1Cn
tinU
P.G
-
0.6
-
0.5
–A
-
0.4
D
-
0.3
-
0.2
Drain Current, I
-
10
fs|–S
y
1.0
Forward Transfer Admittance, |
0.1
-
2SJ501
50Ω
ID-
-2.5V
S
V
DS
-2.0V
-10.0V
-8.0V
-6.0V
-4.0V
-3.0V
-
0
0
-
0.1-0.2-0.3-0.4-0.5-0.6-0.7-0.8-0.9-1.0
Drain-to-Source Voltage, VDS–V
y
|
fs
|
-
7
5
3
2
I
D
VGS=-1.5V
°C
Ta=-25
7
5
3
2
0.01
-
0.1
Drain Current, ID–A
75°C
23 5723 57
VDS=-10V
°C
25
23
-
1.0
-
2.0
VDS=-10V
-
1.8
-
1.6
-
1.4
–A
D
-
1.2
-
1.0
-
0.8
-
0.6
Drain Current, I
-
0.4
-
0.2
0
0
-
0.5
1000
900
800
–mΩ
700
ID=-0.05A
600
DS(on)
500
400
300
200
100
Static Drain-to-Source
On-State Resistance, R
0
0
-1-2-3-4-5-6-7-8-9-
ID-
V
GS
Ta=-25
-
1.0
-
1.5
-
2.0
Gate-to-Source Voltage, VGS–V
-
R
DS(on)
V
GS
ID=-0.3A
Gate-to-Source Voltage, VGS–V
°C
25°C
°C
75
-
2.5
Ta=25°C
-
3.0
10
No.5948–2/4
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