SANYO 2SJ499 Datasheet
Ordering number : ENN6589
2SJ499
P-Channel Silicon MOSFET
2SJ499
Load Switching Applications
Features
•
Low ON-state resistance.
• 4V drive.
Package Dimensions
unit : mm
2083B
[2SJ499]
6.5
0.85
0.6
unit : mm
2092B
5.0
4
0.7
1
23
2.3 2.3
6.5
5.0
4
0.8
1.55.5
1.5
7.0
5.5
1.6
7.5
[2SJ499]
2.3
0.5
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2.3
0.5
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2305
No.6589-1/4
2SJ499
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation PD
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
PW≤10ms, duty cycle≤1% --32 A
Tc=25°C30W
Electrical Characteristics at Ta=25°C
--30 V
±20 V
--10 A
1.0 W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1500 pF
Output Capacitance Coss VDS=--10V, f=1MHz 800 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 370 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 150 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--10A 45 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--10A 6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--10A 11 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--5A, VGS=--10V 27 45 mΩ
RDS(on)2 ID=--2A, VGS=--4V 48 68 mΩ
r
f
SD
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--5A 8 10 S
See specified Test Circuit 80 ns
See specified Test Circuit 140 ns
IS=--5A, VGS=0 --0.9 --1.2 V
min typ max
Ratings
Switching Time Test Circuit
G
50Ω
VDD=--15V
ID=--5A
RL=3Ω
D
S
2SJ499
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
Unit
No.6589-2/4
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