Ordering number : ENN6589
2SJ499
P-Channel Silicon MOSFET
2SJ499
Load Switching Applications
Features
•
Low ON-state resistance.
• 4V drive.
Package Dimensions
unit : mm
2083B
[2SJ499]
6.5
0.85
0.6
unit : mm
2092B
5.0
4
0.7
1
23
2.3 2.3
6.5
5.0
4
0.8
1.55.5
1.5
7.0
5.5
1.6
7.5
[2SJ499]
2.3
0.5
1.2
0.5
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
2.3
0.5
7.0
2.5
0.5
1.2
0 to 0.2
1.2
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
0.85
12
0.6
2.3 2.3
3
0.8
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82200 TS IM TA-2305
No.6589-1/4
2SJ499
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation PD
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
PW≤10ms, duty cycle≤1% --32 A
Tc=25°C30W
Electrical Characteristics at Ta=25°C
--30 V
±20 V
--10 A
1.0 W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Source Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.5 V
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--10V, f=1MHz 1500 pF
Output Capacitance Coss VDS=--10V, f=1MHz 800 pF
Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 370 pF
Turn-ON Delay Time td(on) See specified Test Circuit 15 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 150 ns
Fall Time t
Total Gate Charge Qg VDS=--10V, VGS=--10V, ID=--10A 45 nC
Gate-to-Source Charge Qgs VDS=--10V, VGS=--10V, ID=--10A 6 nC
Gate-to-Drain “Miller” Charge Qgd VDS=--10V, VGS=--10V, ID=--10A 11 nC
Diode Forward Voltage V
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--5A, VGS=--10V 27 45 mΩ
RDS(on)2 ID=--2A, VGS=--4V 48 68 mΩ
r
f
SD
=--1mA, VGS=0 --30 V
VDS=--30V, VGS=0 --10 µA
VGS=±16V, VDS=0 ±10 µA
VDS=--10V, ID=--5A 8 10 S
See specified Test Circuit 80 ns
See specified Test Circuit 140 ns
IS=--5A, VGS=0 --0.9 --1.2 V
min typ max
Ratings
Switching Time Test Circuit
G
50Ω
VDD=--15V
ID=--5A
RL=3Ω
D
S
2SJ499
V
OUT
0V
--10V
PW=10µs
D.C.≤1%
P.G
V
IN
V
IN
Unit
No.6589-2/4
ID -- V
--12
--10
--8.0V
--6.0V
DS
--4.0V
--8
-- A
D
--6
--4
--10.0V
Drain Current, I
--2
0
0
--0.2 --0.3--0.1 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source V oltage, VDS -- V
100
90
80
70
(on) -- mΩ
60
DS
Static Drain-to-Source
On-State Resistance, R
--2A
50
40
30
20
10
0
0 --2 --4 --6 --8 --10 --12 --14 --16 --18
RDS(on) -- V
ID= --5A
GS
Gate-to-Source V oltage, VGS -- V
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
Forward Transfer Admittance, yfs -- S
0.1
23
--0.01
10000
7
5
3
2
1000
7
5
Ciss, Coss, Crss -- pF
3
2
100
0 --5 --10 --15 --20 --25 --30
Ciss, Coss, Crss -- V
yfs -- I
Tc= --25°C
25°C
2535
--0.1
Drain Current, I
Drain-to-Source V oltage, V
75°C
--1.0
D
23 5
-- A
D
DS
--3.5V
V
= --2.5V
GS
VDS= --10V
23 5
--10
DS
f=1MHz
Ciss
Coss
Crss
-- V
2SJ499
--3.0V
IT01946
--20
IT01948
--100
IT01950
IT01952
ID -- V
--20
VDS=--10V
--18
--16
--14
-- A
D
--12
--10
--8
--6
Drain Current, I
--4
--2
--0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0
GS
Tc=75°C
--25°C
Gate-to-Source V oltage, VGS -- V
80
70
60
(on) -- mΩ
50
DS
40
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
--60 --20 0--40 20 40 60 80 100 120 140 160
RDS(on) -- Tc
= --4V
GS
= --2A, V
I
D
GS
= --5A, V
I
D
= --10V
Case Temperature, Tc -- °C
I
-- V
F
25°C
GS
SD
--25°C
SD
-- Qg
--100
7
5
3
2
--10
7
5
-- A
F
3
2
--1.0
7
5
3
2
--0.1
7
5
3
2
--0.01
0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
Tc=75°C
Diode Forward V oltage, V
--10
VDS= --10V
--9
ID= --10A
--8
-- V Forward Current, I
--7
GS
--6
--5
--4
--3
--2
Gate-to-Source V oltage, V
--1
0
0 5 10 15 20 25 30 35 40 45
V
Total Gate Charge, Qg -- nC
25°C
-- V
No.6589-3/4
IT01947
IT01949
VGS=0
IT01951
IT01953
Switching Time, SW Time -- ns
1000
100
10
1.2
7
5
3
2
7
5
3
2
--0.1
SW Time -- I
t
(off)
d
23 5723 57
--1.0
Drain Current, I
PD -- Ta
D
D
-- A
VDD= --15V
VGS= --10V
r
t
t
f
td(on)
23
--10
IT01954
2SJ499
--100
7
5
IDP= --32A
3
2
ID= --10A
-- A
--10
7
D
5
3
2
Operation in
--1.0
this area is
7
Drain Current, I
5
limited by RDS(on).
3
2
Tc=25°C
Single pulse
--0.1
--0.1
40
23 57
A S O
DC operation
23 57
--1.0
Drain-to-Source V oltage, V
PD -- Tc
10ms
--10
DS
10µA
1ms
100µA
23 57
-- V
IT01955
--100
1.0
-- W
D
0.8
0.6
0.4
0.2
Allowable Power Dissipation, P
00
00 20 40 60 80 100 120 140 160
Amibient Tamperature, Ta -- °C
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co. , Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
IT01956
-- W
D
30
20
10
Allowable Power Dissipation, P
0
00 20 40 60 80 100 120 140 160
Case Temperature, Tc -- °C
IT01957
This catalog provides information as of August, 2000. Specifications and information herein are subject
to change without notice.
No.6589-4/4
PS
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