SANYO 2SJ466 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN5491B

2SJ466

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

· Enables simplified fabrication, high-density mount­ing, and miniaturization in end products due to the
surface mountable package.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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)esluP(tnerruCniarDI

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erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

SSD
SSG

D

PD

D

Package Dimensions

unit:mm

2128

PW≤10µs, duty cycle≤1%
Tc=25˚C

[2SJ466]

8.2

7.8

0.4

4.2

2.5

6.2

0.2

3

8.4

1.2

2

1.0

2.54

6.2

1.0

2.54

1

5.08

10.0

6.0

10.0

0.6

0.7

0.3

0.6

7.8

5.2

1 : Gate
2 : Source
3 : Drain
SANYO : ZP

03–V
02±V
53–A
041–A
05W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR

SSD
SSG

SG

SD

I

SSD)RB(

D

I

SSG)RB(

G

V

SD

V

SG

)ffo(VSDI,V01–=

I

D

)no(

I

D

V,Am1–=

0=03–V

SG

V,Aµ001±=

0=02±V

SD

V,V03–=

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–0.2–V

D

A81–=6172S

D

V,A81–=
V,A81–=

V01–=0203mΩ

SG

V4–=0304mΩ

SG

31000TS (KOTO) TA-2368 No.5491–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

2SJ466

Continued from preceding page.

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emiTyaleDFFO-nruTt

emiTllaFt

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r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

VDD=--30V

V

0V

--10V

PW=10µs
D.C.≤1%

P.G

in

V

in

G

50Ω

ID=--18A

RL=1.67Ω

D

2SJ466

S

V

OUT

zHM1=f,V01–=0004Fp
zHM1=f,V01–=0042Fp
zHM1=f,V01–=088Fp

tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS002sn
tiucriCtseTdeificepseeS005sn
tiucriCtseTdeificepseeS072sn

V,A53–=

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

tinU

--70

--60

--50

–A

D

--40

--30

--20

Drain Current, I

--10

100

fs|–S

y

10

Forward Transfer Admittance, |

1.0

--4.5V

=--5.0V

GS

V

0

0

--2 --4

Drain-to-Source Voltage, VDS–V



7
5

3
2

7
5

3
2

57 3337725

--1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

I

-- V

D

y

fs -- I

DS

--4.0V

--3.5V

--3.0V

--2.5V

--6 --8 --10

IT00681

D

VDS=--10V

°C

Tc=--25

75°C

--10

25°C

25

IT00683

--100

I

-- V

--70

--60

--50

–A

D

--40

--30

--20

Drain Current, I

--10

0

0 --1 --2 --3 --4 --5 --6

60

50

–mΩ

40

(on)

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0

Gate-to-Source Voltage, VGS–V

--2

D

RDS(on) -- V

--4 --6

GS

--8

Tc=--25

GS

C

°

°C

75

--10 --12

VDS=--10V

25°C

IT00682

Tc=25°C
ID=--18A

--14

IT00684

No.5491–2/4