SANYO 2SJ459 Datasheet
Ordering number : ENN5423A
2SJ459
P-Channel Silicon MOSFET
2SJ459
Ultrahigh-Speed Switching Applications
Features
•
High-speed diode incorporated.
Package Dimensions
unit : mm
2093A
[2SJ459]
10.2
0.9
11.5
unit : mm
2090A
20.9
9.4
1.6
0.8
123
2.55
0.8
1.2
2.55
[2SJ459]
10.2
4.5
1.3
11.0 8.8
2.7
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
4.5
1.3
9.93.0
123
0.8
2.55
8.8
1.5max
1.2
2.55
2.552.55
1.35
1 : Gate
2 : Drain
3 : Source
2.7
SANYO : SMP-FD
1.4
0 to 0.3
0.4
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
83002 TS IM TA-100040
No.5423-1/4
2SJ459
Specifications
Absolute Maximum Ratings at T a=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --16 A
Tc=25°C70W
Electrical Characteristics at Ta=25°C
--450 V
±30 V
--4 A
1.65 W
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --2.0 --3.0 V
Forward Transfer Admittance yfs
Static Drain-to-Source On-State Resistance
Input Capacitance Ciss VDS=--20V, f=1MHz 1500 pF
Output Capacitance Coss VDS=--20V, f=1MHz 230 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 80 pF
Turn-ON Delay Time td(on) See specified Test Circuit. 35 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit. 300 ns
Fall Time t
Diode Forward Voltage V
Diode Reverse Recovery Time t
(BR)DSSID
DSS
GSS
RDS(on) ID=--2A, VGS=--10V 2.0 2.8 Ω
r
f
SD
rr
=--10mA, VGS=0 --450 V
VDS=--360V, VGS=0 --1.0 mA
VGS=±30V, VDS=0 ±100 nA
VDS=--10V, ID=--2A 1.2 2.4 S
See specified Test Circuit. 50 ns
See specified Test Circuit. 80 ns
IS=--4A, VGS=0 --1.5 V
IS=--4A, di / dt=100A / µs 150 195 ns
min typ max
Ratings
Marking : J459
*(Note) Care must be taken in handling the 2SJ459 because no protection diode is provided between gate and source.
Switching Time Test Circuit
VDD= --200V
V
0V
--10V
PW=10µs
D.C.≤1%
IN
V
IN
G
D
ID= --2A
RL=100Ω
V
OUT
Unit
P.G
50Ω
2SJ459
S
No.5423-2/4
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