SANYO 2SJ413 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN5366A
2SJ413
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
16.0
21.0
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
D
SSD
SSG
PW≤10µs, duty cycle≤1%
PD
Tc=25˚C
Package Dimensions
unit:mm
2076B
[2SJ413]
3.4
5.0
8.0
4.0
12
5.45
2.8
2.0
1.0
3
3.5
5.45
22.0
20.4
5.6
3.1
2.0
2.0
0.6
1 : Gate
2 : Drain
3 : Source
SANYO : TO-3PML
06–V
02±V
05–A
002–A
0.3W
07W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
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tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
R
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
R
SSD
SSG
SG
I
SSD)RB(
D
I
SSG)RB(
G
V
V
)ffo(VSDI,V01–=
1I
)no(SD
D
2I
)no(SD
D
V,Am1–=
0=06–V
SG
V,Aµ001±=
0=02±V
SD
V,V06–=
SD
SG
0=001–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–0.2–V
D
A52–=7254S
D
V,A52–=
V,A52–=
V01–=5102mΩ
SG
V4–=0203mΩ
SG
nimpytxam
Marking : JE Continued on next page.
60100TS (KOTO) TA-2633 No.5366–1/4
sgnitaR
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2SJ413
Continued from preceding page.
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emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
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r
f
DS
SD
SD
SD
)no(d
)ffo(d
I
S
Switching Time Test Circuit
VDD=—30V
ID=—25A
RL=1.2Ω
D
V
OUT
0V
—10V
V
IN
PW=10µs
D.C.≤1%
V
IN
G
zHM1=f,V02–=0067Fp
zHM1=f,V02–=0042Fp
zHM1=f,V02–=006Fp
tiucriCtseTdeificepseeS06sn
tiucriCtseTdeificepseeS052sn
tiucriCtseTdeificepseeS009sn
tiucriCtseTdeificepseeS053sn
V,A05–=
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
tinU
-
50
-
40
–A
-
30
D
-
20
Drain Current, I
-
10
100
fs|–S
y
10
1.0
Forward Transfer Admittance, |
0.1
P.G
50Ω
ID-
4.0V
-
10.0V
-
-
8.0V
-
6.0V
-
5.0V
0
0
-
0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6-1.8-2.0 0
2SJ413
S
V
DS
-
3.0V
V
=
-
2.0V
GS
Drain-to-Source Voltage, VDS–V
y
fs -- I
VDS=-10V
7
5
3
2
7
5
3
2
7
5
3
2
-
0.1
-
1.0
Drain Current, ID–A
Tc=
75
D
°C
25
°C
-
-
10
°C
25
723 5723 5723 5
-
100
-
100
VDS=-10V
-
90
-
80
-
70
–A
-
60
D
-
50
-
40
-
30
Drain Current, I
-
20
-
10
0
60
50
-
1
Gate-to-Source Voltage, V
–mΩ
40
DS(on)
30
20
10
Static Drain-to-Source
On-State Resistance, R
0
-
10
-
2
Gate-to-Source Voltage, V
-3-
ID-
V
GS
25°C
-
Tc=
°C
75
-
2
-
3
-
4
GS
R
DS(on)
4
-
V
GS
-5-6-7-8-9-10-11-
GS
°C
25
–V
–V
-
5
Tc=25°C
ID=-25A
-
6
12
No.5366–2/4
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