Sanyo 2SJ348 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6421

2SJ348

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

10.2

18.0

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C

Package Dimensions

unit:mm

2052C

[2SJ348]

3.6

5.6

2.55

5.1

123

2.7

6.3

15.1

1.2

14.0

0.8

2.7

2.55

4.5

1.3

0.4

1 : Gate
2 : Drain
3 : Source
SANYO : TO-220

06–V
02±V
03–A
021–A

57.1W
07W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-NOecruoS-ot-niarDcitatSR

SSD
SSG

SG

SD

I

SSD)RB(

D

I

SSG)RB(

G

V

SD

V

SG

)ffo(VSDI,V01–=

I

D

)no(

I

D

V,Am1–=

0=06–V

SG

V,Aµ001±=

0=02±V

SD

V,V06–=

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–0.2–V

D

A51–=5152S

D

V,A51–=
V,A51–=

V01–=0304mΩ

SG

V4–=0455mΩ

SG

sgnitaR

nimpytxam

tinU

Continued on next page.

31000TS (KOTO) TA-2174 No.6421–1/4

2SJ348

Continued from preceding page.

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ecnaticapaCrefsnarTesreveRssrCV

emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

VDD=--30V

V

0V

--10V

PW=10µs
D.C.≤1%

P.G

in

V

in

G

50Ω

ID=--15A

RL=2Ω

D

S

V

2SJ348

OUT

zHM1=f,V02–=0083Fp
zHM1=f,V02–=0021Fp
zHM1=f,V02–=003Fp

tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS054sn
tiucriCtseTdeificepseeS022sn

V,A03–=

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

tinU

--50

--40

–A

--30

D

--20

Drain Current, I

--10

20

fs|–S

y

10

Forward Transfer Admittance, |

1.0

I

-- V

=--5.0V

GS

V

--4.5V

D

--4.0V

DS

--50

--40

--3.5V

–A

D

--30

--3.0V

--20

Drain Current, I

--2.5V

0

0

7
5

3
2

7
5

3
2

--2

Drain-to-Source Voltage, VDS–V

5333

7

--1.0

--4

y

fs -- I



--8

D

--10--6

IT00671

VDS=--10V

Tc=--25°C

75°C

22

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

7

5

--10 --20

25°C

5

7

IT00673

--10

–mΩ

(on)

DS

Static Drain-to-Source

On-State Resistance, R

I

-- V

D

GS

VDS=--10V

°C

Tc=--25

0

0

70

60

50

40

30

20

10

0

0

--2-- 1 --3 --5 --6--4

Gate-to-Source Voltage, VGS–V

RDS(on) -- V

--8--2 --12 --14--6 --10--4

25°C

75°C

IT00672

GS

Tc=25°C

ID=--15A

IT00674

No.6421–2/4