SANYO 2SJ340 Datasheet
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6420
2SJ340
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Features
· Low ON-resistance.
· Ultrahigh-speed switching.
· 4V drive.
· Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the
surface mountable package.
Package Dimensions
unit:mm
2093A
[2SJ340]
10.2
0.9
11.5
unit:mm
2090A
20.9
9.4
1.6
0.8
123
2.55
1.2
2.55
[2SJ340]
4.5
1.3
11.0 8.8
2.7
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
10.2
0.8
9.93.0
1.5max
123
0.8
2.55
1.2
2.55
2.7
2.552.55
80700TS (KOTO) TA-2165 No.6420–1/4
4.5
8.8
1.35
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
1.3
1.4
0 to 0.3
0.4
2SJ340
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-nOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
Marking:J304
SSD
SSG
D
SG
R
SD
R
SD
WP ≤ elcycytud,sµ01 ≤ %1021–A
PD
D
Tc=25˚C
SSD
SSG
)ffo(VSDI,V01–=
1)no(IDV,A51–=
2)no(IDV,A51–=
)no(d
r
)ffo(d
f
DS
I
SSD)RB(
D
I
SSG)RB(
G
V
V
I
S
V,Am1–=
0=06–V
SG
V,Aµ001±=
0=02±V
SD
V,V06–=
SD
SG
SD
SD
SD
0=001–Aµ
SG
V,V61±=
0=01±Aµ
SD
Am1–=0.1–0.2–V
D
A51–=5152S
D
V01–=0304mΩ
SG
V4–=0455mΩ
SG
zHM1=f,V02–=0083Fp
zHM1=f,V02–=0021Fp
zHM1=f,V02–=003Fp
tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS054sn
tiucriCtseTdeificepseeS022sn
V,A03–=
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
06–V
02±V
03–A
56.1W
07W
˚C
˚C
tinU
Switching Time Test Circuit
VDD=--30V
V
0V
--10V
PW=10µs
D.C.≤1%
P.G
in
V
in
G
50Ω
ID=--15A
RL=2Ω
D
S
V
2SJ340
OUT
No.6420–2/4
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