SANYO 2SJ339 Datasheet

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

P-Channel Silicon MOSFET

Ultrahigh-Speed Switching Applications

Ordering number:ENN6396

2SJ339

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

18.1

4.5

Features

· Low ON resistance.

· Ultrahigh-speed switching.

· 4V drive.

· Micaless package facilitating mounting.

Specifications

Absolute Maximum Ratings at Ta = 25˚C

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egatloVecruoS-ot-etaGV

)CD(tnerruCniarDI

)esluP(tnerruCniarDI

noitapissiDrewoPelbawollAP

erutarepmeTlennahChcT 051

erutarepmeTegarotSgtsT 051+ot55–

D

D

SSD
SSG

PW≤10µs, duty cycle≤1%

PD

Tc=25˚C

Package Dimensions

unit:mm

2063A

[2SJ339]

10.0

3.2

5.6

1

2.55

2.55

3.5

1.6

1.2

0.75

23

2.55

2.55

2.8

7.2

16.0

2.4

0.7

14.0

1 : Gate

2.4

2 : Drain
3 : Source
SANYO : TO-220ML

06–V
02±V
52–A
001–A
2W
04W

˚C
˚C

Electrical Characteristics at Ta = 25˚C

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egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI

egatloVffotuCV

ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=

ecnatsiseRetatS-nOecruoS-ot-niarDcitatSR

SSD
SSG

SG

SD

I

SSD)RB(

D

I

SSG)RB(

G

V

SD

V

SG

)ffo(VSDI,V01–=

I

D

)no(

I

D

V,Am1–=

0=06–V

SG

V,Aµ001±=

0=02±V

SD

V,V06–=

0=001–Aµ

SG

V,V61±=

0=01±Aµ

SD

Am1–=0.1–0.2–V

D

A51–=5152S

D

V,A51–=
V,A51–=

V01–=0304mΩ

SG

V4–=0455mΩ

SG

30300TS (KOTO) TA-2177 No.6396–1/4

sgnitaR

nimpytxam

Continued on next page.

tinU

2SJ339

Continued from preceding page.

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emiTyaleDNO-nruTt

emiTesiRt

emiTyaleDFFO-nruTt

emiTllaFt

egatloVdrawroFedoiDV

r

f

DS

SD
SD
SD

)no(d

)ffo(d

I

S

Switching Time Test Circuit

VDD=--30V

V

0V

--10V

PW=10µs
D.C.≤1%

P.G

IN

V

IN

G

50Ω

ID=--15A

RL=2Ω

D

S

V

OUT

zHM1=f,V02–=0083Fp
zHM1=f,V02–=0021Fp
zHM1=f,V02–=003Fp

tiucriCtseTdeificepseeS03sn
tiucriCtseTdeificepseeS051sn
tiucriCtseTdeificepseeS054sn
tiucriCtseTdeificepseeS022sn

V,A52–=

0=0.1–5.1–V

SG

sgnitaR

nimpytxam

tinU

--50

--40

–A

D

--30

--20

Drain Current, I

--10

100

fs|–S

y

10

Forward Transfer Admittance, |

1.0

I

=--5.0V

GS

V

--4.0V

--4.5V

D

-- V

DS

--3.5V

--3.0V

--50

--40

–A

D

--30

--20

I

D

-- V

Tc=--25°C

GS

VDS=--10V

25°C

75°C

Drain Current, I

--2.5V

0

0

7
5

3
2

7
5

3
2

3

--2--1 --3 --5 --7 --9--4 --8 --10--6

Drain-to-Source Voltage, VDS–V

yfs -- I

D

IT00661

VDS=--10V

°C

Tc=--25

75°C

23 5 3 57

--1.0

Drain Current, ID– A Gate-to-Source Voltage, VGS–V

25°C

2757

--10 --100

IT00663

--10

0

0

Gate-to-Source Voltage, VGS–V

70

60

50

–mΩ

(on)

40

DS

30

20

10

Static Drain-to-Source

On-State Resistance, R

0

0

--2--1 --3 --5 --6--4

RDS(on) -- V

--8--2 --12 --14--6 --10--4

IT00662

GS

Tc=25°C
ID=--15A

IT00664

No.6396–2/4