Sanyo 2SJ320 Specifications

Ordering number:EN4615A

P-Channel Silicon MOSFET

2SJ320

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

·Low ON resistance.

·Ultrahigh-speed switching.

·Low-voltage drive.

·Micaless package facilitating mounting.

Specifications

unit:mm

2063A

[2SJ320]

	10.0	3.5	7.2
3.2
			16.0
18.1
5.6		1.6
		1.2	14.0
		0.75
1	2	3
2.55		2.55

	2.4
2.55	2.55

4.5

2.8

2.4

0.7

1 : Gate

2 : Drain

3 : Source

SANYO :TO-220ML

Absolute Maximum Ratings at Ta = 25˚C

	Parameter	Symbol	Conditions	Ratings	Unit
	Drain-to-Source Voltage	VDSS		–250	V
	Gate-to-Source Voltage	VGSS		±30	V
	Drain Current (DC)	ID		–4	A
	Drain Current (Pulse)	IDP	PW≤10µs, duty cycle≤1%	–16	A
	Allowable Power Dissipation	PD		2.0	W
			Tc=25˚C	25	W
	Channel Temperature	Tch		150	˚C
	Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=–1mA, VGS=0	–250			V
Gate-to-Source Breakdown Voltage	V(BR)GSS	IG=±100µA, VDS=0	±30			V
Zero-Gate Voltage Drain Current	IDSS	VDS=–250V, VGS=0			–100	µA
Gate-to-Source Leakage Current	IGSS	VGS=±25V, VDS=0			±10	µA
Cutoff Voltage	VGS(off)	VDS=–10V, ID=–1mA	–1.5		–2.5	V
Forward Transfer Admittance	| yfs |	VDS=–10V, ID=–2A	1.8	3		S
Static Drain-to-Source ON-State Resistance	RDS(on)	ID=–2A, VGS=–10V		1.0	1.3	Ω

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

41599TH (KT)/30395TS (KOTO) TA-0053 No.4615–1/4

2SJ320

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=–20V, f=1MHz		750		pF
Output Capacitance	Coss	VDS=–20V, f=1MHz		140		pF
Reverse Transfer Capacitance	Crss	VDS=–20V, f=1MHz		65		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		17		ns
Rise Time	tr	See specified Test Circuit		23		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		95		ns
Fall Time	tf	See specified Test Circuit		80		ns
Diode Forward Voltage	VSD	IS=–4A, VGS=0		–1.0	–1.5	V

Switching Time Test Circuit

No.4615–2/4