Sanyo 2SJ289 Specifications

Ordering number : ENN6609

2SJ289

P-Channel Silicon MOSFET

2SJ289

Ultrahigh-Speed Switching Applications

Features		Package Dimensions
•	Low ON-resistance.	unit : mm
•	Ultrahigh-speed switching.	2062A
•	Low-voltage drive.				[2SJ289]
			4.5			1.5
			1.6
					2.5	4.25max
		0.4		0.5	1.0
		3 1.5	2		1	0.4
			3.0			1 : Gate
		0.75				2 : Drain
						3 : Source
Specifications						SANYO : PCP

Absolute Maximum Ratings at Ta=25°C

	Parameter	Symbol	Conditions	Ratings	Unit
	Drain-to-Source Voltage	VDSS		--100	V
	Gate-to-Source Voltage	VGSS		±15	V
	Drain Current (DC)	ID		--500	mA
	Drain Current (Pulse)	IDP	PW£10ms, duty cycle£1%	--1	A
	Allowable Power Dissipation	PD	Mounted on a ceramic board (250mm2 0.8mm)	1.3	W
			Tc=25°C	3.5	W
	Channel Temperature	Tch		150	°C
	Storage Temperature	Tstg		--55 to +150	°C

Electrical Characteristics at Ta=25°C

	Parameter	Symbol	Conditions		Ratings		Unit
				min	typ	max
	Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=--1mA, VGS=0	--100			V
	Zero-Gate Voltage Drain Current	IDSS	VDS=--100V, VGS=0			--100	mA
	Gate-to-Sourse Leakage Current	IGSS	VGS=±12V, VDS=0			±10	mA
	Cutoff Voltage	VGS(off)	VDS=--10V, ID=--1mA	--1.0		--2.0	V
	Forward Transfer Admittance	½yfs½	VDS=--10V, ID=--250mA	240	400		mS
	Static Drain-to-Sourse On-State Resistance	RDS(on)1	ID=--250mA, VGS=--10V		5	7	W
		RDS(on)2	ID=--250mA, VGS=--4V		6.5	9	W

Marking : JF

Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

90100 TS IM TA-1274 No.6609-1/4

2SJ289

Continued from preceding page.

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Input Capacitance	Ciss	VDS=--20V, f=1MHz		45		pF
Output Capacitance	Coss	VDS=--20V, f=1MHz		14		pF
Reverse Transfer Capacitance	Crss	VDS=--20V, f=1MHz		3		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		7		ns
Rise Time	tr	See specified Test Circuit		10		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		35		ns
Fall Time	tf	See specified Test Circuit		20		ns
Diode Forward Voltage	VSD	IS=--500mA, VGS=0		--1		V

Switching Time Test Circuit

		VDD= --50V
	VIN
	0V	ID= --250mA
	--10V	RL=200Ω
	VIN	VOUT
		D
	PW=10µs
	D.C.≤ 1%
	G
	P.G
	50Ω	2SJ289
		S

	--200							ID -- VDS
						0V .		0V	--2.8V	--2.6V
		0V			.
				--	4	--	3
		.
	--160	10
mA		--
--										--2.4V
D	--120
I
Current,	--80
										--2.2V
Drain
	--40									--2.0V
										VGS= --1.8V
	0	0	--1					--2	--3	--4	--5

Drain-to-Source Voltage, VDS -- V IT02287

RDS(on) -- VGS

14

ID= --100mA

	-- Ω	12
	(on)
	DS	10
	to-DrainStatic-Source Resistance,State-On R
		8

6

4

0	--2	--4	--6	--8	--10	--12	--14	--16
		Gate-to-Source Voltage, VGS				-- V	IT02290

	--300										ID -- VGS
		VDS= --10V
mA	--250
	--200
--
D
I																		°
Current,	--150
																	25		C
Drain	--100
																	Tc=75			°	C		°	C
	--50																				--	25
	0
	0		--0.5				--1.0						--1.5				--2.0								--2.5			--3.0
						Gate-to-Source Voltage, VGS -- V																						IT02288
	12								RDS(on)							-- Ta
-- Ω	10
(on)																	4A
																--
DS																=
	8														VGS				10A
SourceDrainStatic-to- Resistance,StateOn-R												100mA,							--
																	=
											--					VGS
													100mA,
									=
									ID			--
	6
									=
									ID
	4
	2
	--60		--40 --20				0 20						40 60 80 100												120			140 160
							Ambient Temperature, Ta -- °C																					IT02291
																									No.6609-2/4