Sanyo 2SJ289 Specifications
Ordering number : ENN6609
2SJ289
P-Channel Silicon MOSFET
2SJ289
Ultrahigh-Speed Switching Applications
Features
• Low ON-resistance.
•
Ultrahigh-speed switching.
• Low-voltage drive.
Package Dimensions
unit : mm
2062A
[2SJ289]
4.5
1.6
2.5
0.4
3
1.5
0.75
3.0
0.5
2
1.0
1
1.5
4.25max
0.4
1 : Gate
2 : Drain
3 : Source
Specifications
SANYO : PCP
Absolute Maximum Ratings at T a=25 °C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage V
Gate-to-Source Voltage V
Drain Current (DC) I
Drain Current (Pulse) I
Allowable Power Dissipation P
Channel T emperature T ch 150 °C
Storage T emperature Tstg --55 to +150 °C
DSS
GSS
D
DP
D
PW≤10µs, duty cycle≤1% --1 A
Mounted on a ceramic board (250mm
Tc=25°C 3.5 W
2
✕0.8mm) 1.3 W
--100 V
±15 V
--500 mA
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions
Drain-to-Source Breakdown Voltage V
Zero-Gate Voltage Drain Current I
Gate-to-Sourse Leakage Current I
Cutoff Voltage VGS(off) VDS=--10V, ID=--1mA --1.0 --2.0 V
Forward Transfer Admittance
Static Drain-to-Sourse On-State Resistance
(BR)DSSID
DSS
GSS
yfs
RDS(on)1 ID=--250mA, VGS=--10V 5 7 Ω
RDS(on)2 ID=--250mA, VGS=--4V 6.5 9 Ω
=--1mA, VGS=0 --100 V
VDS=--100V, VGS=0 --100 µA
VGS=±12V, VDS=0 ±10 µA
VDS=--10V, ID=--250mA 240 400 mS
min typ max
Marking : JF Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Ratings
Unit
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
90100 TS IM TA-1274
No.6609-1/4
2SJ289
Continued from preceding page.
Parameter Symbol Conditions
Input Capacitance Ciss VDS=--20V, f=1MHz 45 pF
Output Capacitance Coss VDS=--20V, f=1MHz 14 pF
Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 3 pF
Turn-ON Delay Time td(on) See specified Test Circuit 7 ns
Rise Time t
Turn-OFF Delay Time td(off) See specified Test Circuit 35 ns
Fall Time t
Diode Forward Voltage V
SD
See specified Test Circuit 10 ns
r
See specified Test Circuit 20 ns
f
IS=--500mA, VGS=0 --1 V
min typ max
Switching Time Test Circuit
VDD= --50V
V
IN
0V
--10V
PW=10µs
D.C.≤1%
P.G
V
IN
G
50Ω 2SJ289
ID= --250mA
RL=200Ω
D
S
V
OUT
Ratings
Unit
I
-- V
D
--200
--160
-- mA
--120
D
--80
--4.0V
--10.0V
--3.0V
DS
--2.8V
--2.6V
--2.4V
--2.2V
Drain Current, I
--40
--2.0V
VGS= --1.8V
0
0 --1 --2 --3 --4 --5
Drain-to-Source V oltage, VDS -- V
14
12
RDS(on) -- V
GS
ID= --100mA
(on) -- Ω
DS
10
8
IT02287
--300
--250
--200
-- mA
D
--150
--100
D
VDS= --10V
GS
I
-- V
Drain Current, I
--50
0
0 --1.0 --2.0 --3.0--0.5 --1.5 --2.5
Gate-to-Source V oltage, VGS -- V
12
10
RDS(on) -- Ta
(on) -- Ω
DS
8
= --100mA, V
I
6
D
= --100mA, V
I
D
GS
25°C
Tc=75°C
= --4A
= --10A
GS
--25°C
IT02288
6
Static Drain-to-Source
On-State Resistance, R
4
0 --2 --4 --6 --8 --10 --12 --14 --16
Gate-to-Source V oltage, VGS -- V
IT02290
4
Static Drain-to-Source
On-State Resistance, R
2
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT02291
No.6609-2/4
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