Sanyo 2SJ277 Specifications

Ordering number:EN4241

P-Channel Silicon MOSFET

2SJ277

Ultrahigh-Speed Switching Applications

Features

Package Dimensions

·Low ON resistance.

·Ultrahigh-speed switching.

·Low-voltage drive.

·Surface mount type device making the following possible.

·Reduction in the number of manufacturing processes for 2SJ277-applied equipment.

·High density surface mount applications.

·Small size of 2SJ277-applied equipment.

unit:mm

2093A

				[2SJ277]
	0.9	10.2			4.5
					1.3
11.5				8.8
	1.6
20.9				1.2
9.4	0.8			11.0
					0.4
	1	2	3		1 : Gate
				2.7	2 : Drain
					3 : Source
	2.55			2.55	SANYO : SMP

unit:mm

2090A

0.8

10.2	[2SJ277]
	4.5	1.3

3.0 9.9

1.5max 8.8

1	2	3
0.8		1.2
2.55		2.55

2.7

2.55 2.55

1.35

1.4

0 to 0.3

0.4

1 : Gate

2 : Drain

3 : Source

SANYO : SMP-FD

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.

SANYO Electric Co.,Ltd. Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

42899TH (KT)/51193TH (KOTO) AX-8376 No.4241–1/4

2SJ277

Specifications

Absolute Maximum Ratings at Ta = 25˚C

	Parameter	Symbol	Conditions	Ratings	Unit
	Drain-to-Source Voltage	VDSS		–100	V
	Gate-to-Source Voltage	VGSS		±15	V
	Drain Current (DC)	ID		–15	A
	Drain Current (Pulse)	IDP	PW≤10µs, duty cycle≤1%	–60	A
	Allowable Power Dissipation	PD		1.65	W
			Tc=25°C	70	W
	Channel Temperature	Tch		150	˚C
	Storage Temperature	Tstg		–55 to +150	˚C

Electrical Characteristics at Ta = 25˚C

Parameter	Symbol	Conditions		Ratings		Unit
			min	typ	max
Drain-to-Source Breakdown Voltage	V(BR)DSS	ID=–1mA, VGS=0	–100			V
Gate-to-Source Breakdown Voltage	V(BR)GSS	IG=±100µA, VDS=0	±15			V
Zero-Gate Voltage Drain Current	IDSS	VDS=–100V, VGS=0			–100	µA
Gate-to-Source Leakage Current	IGSS	VGS=±12V, VDS=0			±10	µA
Cutoff Voltage	VGS(off)	VDS=–10V, ID=–1mA	–1.0		–2.0	V
Forward Transfer Admittance	| yfs |	VDS=–10V, ID=–8A	7.5	13		S
Static Drain-to-Source ON-State Resistance	RDS(on)	ID=–8A, VGS=–10V		120	160	mΩ
	RDS(on)	ID=–8A, VGS=–4V		160	220	mΩ
Input Capacitance	Ciss	VDS=–20V, f=1MHz		1900		pF
Output Capacitance	Coss	VDS=–20V, f=1MHz		400		pF
Reverse Transfer Capacitance	Crss	VDS=–20V, f=1MHz		80		pF
Turn-ON Delay Time	td(on)	See specified Test Circuit		18		ns
Rise Time	tr	See specified Test Circuit		25		ns
Turn-OFF Delay Time	td(off)	See specified Test Circuit		300		ns
Fall Time	tf	See specified Test Circuit		120		ns
Diode Forward Voltage	VSD	IS=–15A, VGS=0		–1.0	–1.5	V

Switching Time Test Circuit

No.4241–2/4