Sanyo 2SJ265 Specifications

Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4235
2SJ265
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
18.1
4.5
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Micaless package facilitating mounting.
Specifications
Absolute Maximum Ratings at Ta = 25˚C
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egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
D
PD
D
SSD SSG
PW10µs, duty cycle1%
Tc=25°C
Package Dimensions
unit:mm
2063A
[2SJ265]
10.0
3.2
5.6
1
2.55
2.55
23
1.6
2.55
1.2
0.75
2.55
3.5
7.2
2.4
16.0
14.0
2.8
2.4
0.7
1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML
06–V 51±V 51–A 06–A
0.2W 03W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
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V
SSD
V
SSG
V
)ffo(SG
I
)no(SD
D
I
)no(SD
D
V,Am1–=
0=06–V
SG
V,Aµ001±=
0=51±V
SD
V,V06–=
SD SG SD
V,A9–= V,A9–=
0=001–Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D
A9–=85.31S
D
V01–=0608m
SG
V4–=08011m
SG
40199TH (KT)/42893TH (KOTO) AX-8376 No.4235–1/4
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2SJ265
Continued from preceding page.
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SD SD SD
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I
S
Switching Time Test Circuit
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V,A51–=
0=0.1–5.1–V
SG
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No.4235–2/4
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