Sanyo 2SJ259 Specifications
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:EN4233
2SJ259
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
9.93.0
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Surface mount type device making the following
possible.
· Reduction in the number of manufacturing processes for 2SJ259-applied equipment.
· High density surface mount applications.
· Small size of 2SJ259-applied equipment.
Package Dimensions
unit:mm
2093A
[2SJ259]
10.2
0.9
11.5
unit:mm
2090A
20.9
0.8
1.6
0.8
9.4
2.55
10.2
1.2
123
2.55
[2SJ259]
4.5
1.3
11.0 8.8
0.4
1 : Gate
4.5
2 : Drain
3 : Source
SANYO : SMP
1.3
2.7
8.8
123
0.8
2.55
1.5max
1.2
2.55
2.552.55
1.35
2.7
1.4
0 to 0.3
0.4
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
42899TH (KT)/51193TH (KOTO) AX-8376 No.4233–1/4
2SJ259
Specifications
Absolute Maximum Ratings at Ta = 25˚C
retemaraPlobmySsnoitidnoCsgnitaRtinU
egatloVecruoS-ot-niarDV
egatloVecruoS-ot-etaGV
)CD(tnerruCniarDI
)esluP(tnerruCniarDI
noitapissiDrewoPelbawollAP
erutarepmeTlennahChcT 051
erutarepmeTegarotSgtsT 051+ot55–
Electrical Characteristics at Ta = 25˚C
retemaraPlobmySsnoitidnoC
egatloVnwodkaerBecruoS-ot-niarDV
egatloVnwodkaerBecruoS-ot-etaGV
tnerruCniarDegatloVetaG-oreZI
tnerruCegakaeLecruoS-ot-etaGI
egatloVffotuCV
ecnattimdArefsnarTdrawroF|sfy|VSDI,V01–=
ecnatsiseRetatS-NOecruoS-ot-niarDcitatS
ecnaticapaCtupnIssiCV
ecnaticapaCtuptuOssoCV
ecnaticapaCrefsnarTesreveRssrCV
emiTyaleDNO-nruTt
emiTesiRt
emiTyaleDFFO-nruTt
emiTllaFt
egatloVdrawroFedoiDV
SSD
SSG
D
PW≤10µs, duty cycle≤1%
PD
D
Tc=25°C
I
SSD)RB(
D
I
SSG)RB(
G
V
SSD
V
SSG
V
)ffo(SG
R
R
I
)no(SD
D
I
)no(SD
D
)no(d
r
)ffo(d
f
I
DS
S
V,Am1–=
0=03–V
SG
V,Aµ001±=
0=51±V
SD
V,V03–=
SD
SG
SD
SD
SD
SD
0=001–Aµ
SG
V,V21±=
0=01±Aµ
SD
I,V01–=
Am1–=0.1–0.2–V
D
A01–=5.841S
D
V,A01–=
V,A01–=
V,A02–=
V01–=0455mΩ
SG
V4–=5557mΩ
SG
zHM1=f,V01–=0002Fp
zHM1=f,V01–=0021Fp
zHM1=f,V01–=044Fp
tiucriCtseTdeificepseeS81sn
tiucriCtseTdeificepseeS05sn
tiucriCtseTdeificepseeS004sn
tiucriCtseTdeificepseeS004sn
0=0.1–5.1–V
SG
sgnitaR
nimpytxam
03–V
51±V
02–A
08–A
56.1W
07W
˚C
˚C
tinU
Switching Time Test Circuit
No.4233–2/4
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